Copper-alloyed ZnS as a p-type transparent conducting material

Copper alloyed ZnS was investigated as a p‐type, transparent conducting material composed of earth‐abundant elements. Thin films of Cu‐alloyed ZnS were synthesized using pulsed laser deposition with Cu contents in the range of x = 0.06–0.27 (Cu content x is reported as the fraction of cation present). Thermopower and Hall effect measurements show that the films are p‐type. We find that transparency and conductivity are comparable to some of the best reported p‐type materials with our best films exhibiting conductivities of 54 S cm−1 and optical transmission of 65% at 550. The hole conduction mechanism is discussed in terms of possible Cu acceptor doping of the ZnS and hole conductivity in a minority Cu2S phase. Transparent rectifying p‐CuZnS/n‐ZnO diodes were fabricated. Photo demonstrating the high transparency of a rectifying heterojunction diode made with p‐type Cu‐alloyed ZnS and n‐type ZnO.