The Defect Structure of Unintentionally Doped α-Al2O3 Crystals

The Defect Structure of Unintentionally Doped α-Al2O3 Crystals

Electrical conductivity and the ionic and electronic transference numbers were determined for two types of unintentionally doped single crystalline sapphire for current directions perpendicular to the r plane (1102). One was acceptor dominated and the other was initially donor (Hix) dominated, chang...

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Veröffentlicht in:Journal of the American Ceramic Society 1979-01, Vol.62 (1-2), p.50-57
Hauptverfasser: MOHAPATRA, S. K., TIKU, S. K., KRÖR, F. A.
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container_issue 1-2
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container_title Journal of the American Ceramic Society
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creator MOHAPATRA, S. K.
TIKU, S. K.
KRÖR, F. A.
description Electrical conductivity and the ionic and electronic transference numbers were determined for two types of unintentionally doped single crystalline sapphire for current directions perpendicular to the r plane (1102). One was acceptor dominated and the other was initially donor (Hix) dominated, changing to acceptor domination after a prolonged anneal at 1600°C. The positions of the electronic energy levels of dominant impurities and the constants regulating the oxidation‐reduction of these impurities and of pure Al2O3 are determined. The latter shows a discrepancy with an expression reported previously.
doi_str_mv 10.1111/j.1151-2916.1979.tb18804.x
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fullrecord <record><control><sourceid>proquest_wiley</sourceid><recordid>TN_cdi_proquest_journals_1298375724</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1298375724</sourcerecordid><originalsourceid>FETCH-LOGICAL-i2740-717677e5b2e12144f605f0b6ed6efa5dd8ce67e14d3960bdf9195690c165714c3</originalsourceid><addsrcrecordid>eNo9kEtOwzAQhi0EEqVwhwjWKR7Hj3gDqtIHoEIXtGJp5eGIhJAUxxHNsbgIZ8JRK2bzazSjb0YfQteAJ-DqtnTBwCcS-ASkkBObQBhiOtmfoBGw4-gUjTDGxBchwefoom1L14IM6Qjdb961N9O5Tq33ak2X2s5or8m9bV3UVte2aOq4qnpv1ux05v3--NOKrAMvMn1r46q9RGe5C311zDHaLuab6MFfrZeP0XTlF0RQ7AsQXAjNEqKBAKU5xyzHCdcZ13nMsixMNRcaaBZIjpMslyAZlzgFzgTQNBijmwN3Z5qvTrdWlU1n3GutAiLDQDBBqNu6O2x9F5Xu1c4Un7HpFWA12FKlGmypQYkabKmjLbVXT9NozrAD-AdA0Vq9_wfE5kNx4Y6ot5elos9YRCuxUMvgD4j4bno</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1298375724</pqid></control><display><type>article</type><title>The Defect Structure of Unintentionally Doped α-Al2O3 Crystals</title><source>Wiley Online Library Journals Frontfile Complete</source><source>Periodicals Index Online</source><creator>MOHAPATRA, S. K. ; TIKU, S. K. ; KRÖR, F. A.</creator><creatorcontrib>MOHAPATRA, S. K. ; TIKU, S. K. ; KRÖR, F. A.</creatorcontrib><description>Electrical conductivity and the ionic and electronic transference numbers were determined for two types of unintentionally doped single crystalline sapphire for current directions perpendicular to the r plane (1102). One was acceptor dominated and the other was initially donor (Hix) dominated, changing to acceptor domination after a prolonged anneal at 1600°C. The positions of the electronic energy levels of dominant impurities and the constants regulating the oxidation‐reduction of these impurities and of pure Al2O3 are determined. The latter shows a discrepancy with an expression reported previously.</description><identifier>ISSN: 0002-7820</identifier><identifier>EISSN: 1551-2916</identifier><identifier>DOI: 10.1111/j.1151-2916.1979.tb18804.x</identifier><language>eng</language><publisher>Oxford, UK: Blackwell Publishing Ltd</publisher><ispartof>Journal of the American Ceramic Society, 1979-01, Vol.62 (1-2), p.50-57</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1111%2Fj.1151-2916.1979.tb18804.x$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1111%2Fj.1151-2916.1979.tb18804.x$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27846,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>MOHAPATRA, S. K.</creatorcontrib><creatorcontrib>TIKU, S. K.</creatorcontrib><creatorcontrib>KRÖR, F. A.</creatorcontrib><title>The Defect Structure of Unintentionally Doped α-Al2O3 Crystals</title><title>Journal of the American Ceramic Society</title><description>Electrical conductivity and the ionic and electronic transference numbers were determined for two types of unintentionally doped single crystalline sapphire for current directions perpendicular to the r plane (1102). One was acceptor dominated and the other was initially donor (Hix) dominated, changing to acceptor domination after a prolonged anneal at 1600°C. The positions of the electronic energy levels of dominant impurities and the constants regulating the oxidation‐reduction of these impurities and of pure Al2O3 are determined. The latter shows a discrepancy with an expression reported previously.</description><issn>0002-7820</issn><issn>1551-2916</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1979</creationdate><recordtype>article</recordtype><sourceid>K30</sourceid><recordid>eNo9kEtOwzAQhi0EEqVwhwjWKR7Hj3gDqtIHoEIXtGJp5eGIhJAUxxHNsbgIZ8JRK2bzazSjb0YfQteAJ-DqtnTBwCcS-ASkkBObQBhiOtmfoBGw4-gUjTDGxBchwefoom1L14IM6Qjdb961N9O5Tq33ak2X2s5or8m9bV3UVte2aOq4qnpv1ux05v3--NOKrAMvMn1r46q9RGe5C311zDHaLuab6MFfrZeP0XTlF0RQ7AsQXAjNEqKBAKU5xyzHCdcZ13nMsixMNRcaaBZIjpMslyAZlzgFzgTQNBijmwN3Z5qvTrdWlU1n3GutAiLDQDBBqNu6O2x9F5Xu1c4Un7HpFWA12FKlGmypQYkabKmjLbVXT9NozrAD-AdA0Vq9_wfE5kNx4Y6ot5elos9YRCuxUMvgD4j4bno</recordid><startdate>197901</startdate><enddate>197901</enddate><creator>MOHAPATRA, S. K.</creator><creator>TIKU, S. K.</creator><creator>KRÖR, F. A.</creator><general>Blackwell Publishing Ltd</general><general>American Ceramic Society</general><scope>BSCLL</scope><scope>HDMVH</scope><scope>K30</scope><scope>PAAUG</scope><scope>PAWHS</scope><scope>PAWZZ</scope><scope>PAXOH</scope><scope>PBHAV</scope><scope>PBQSW</scope><scope>PBYQZ</scope><scope>PCIWU</scope><scope>PCMID</scope><scope>PCZJX</scope><scope>PDGRG</scope><scope>PDWWI</scope><scope>PETMR</scope><scope>PFVGT</scope><scope>PGXDX</scope><scope>PIHIL</scope><scope>PISVA</scope><scope>PJCTQ</scope><scope>PJTMS</scope><scope>PLCHJ</scope><scope>PMHAD</scope><scope>PNQDJ</scope><scope>POUND</scope><scope>PPLAD</scope><scope>PQAPC</scope><scope>PQCAN</scope><scope>PQCMW</scope><scope>PQEME</scope><scope>PQHKH</scope><scope>PQMID</scope><scope>PQNCT</scope><scope>PQNET</scope><scope>PQSCT</scope><scope>PQSET</scope><scope>PSVJG</scope><scope>PVMQY</scope><scope>PZGFC</scope></search><sort><creationdate>197901</creationdate><title>The Defect Structure of Unintentionally Doped α-Al2O3 Crystals</title><author>MOHAPATRA, S. K. ; TIKU, S. K. ; KRÖR, F. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i2740-717677e5b2e12144f605f0b6ed6efa5dd8ce67e14d3960bdf9195690c165714c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1979</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>MOHAPATRA, S. K.</creatorcontrib><creatorcontrib>TIKU, S. K.</creatorcontrib><creatorcontrib>KRÖR, F. A.</creatorcontrib><collection>Istex</collection><collection>Periodicals Index Online Segment 15</collection><collection>Periodicals Index Online</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - West</collection><collection>Primary Sources Access (Plan D) - International</collection><collection>Primary Sources Access &amp; Build (Plan A) - MEA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Midwest</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Northeast</collection><collection>Primary Sources Access (Plan D) - Southeast</collection><collection>Primary Sources Access (Plan D) - North Central</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Southeast</collection><collection>Primary Sources Access (Plan D) - South Central</collection><collection>Primary Sources Access &amp; Build (Plan A) - UK / I</collection><collection>Primary Sources Access (Plan D) - Canada</collection><collection>Primary Sources Access (Plan D) - EMEALA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - North Central</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - South Central</collection><collection>Primary Sources Access &amp; Build (Plan A) - International</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - International</collection><collection>Primary Sources Access (Plan D) - West</collection><collection>Periodicals Index Online Segments 1-50</collection><collection>Primary Sources Access (Plan D) - APAC</collection><collection>Primary Sources Access (Plan D) - Midwest</collection><collection>Primary Sources Access (Plan D) - MEA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Canada</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - UK / I</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - EMEALA</collection><collection>Primary Sources Access &amp; Build (Plan A) - APAC</collection><collection>Primary Sources Access &amp; Build (Plan A) - Canada</collection><collection>Primary Sources Access &amp; Build (Plan A) - West</collection><collection>Primary Sources Access &amp; Build (Plan A) - EMEALA</collection><collection>Primary Sources Access (Plan D) - Northeast</collection><collection>Primary Sources Access &amp; Build (Plan A) - Midwest</collection><collection>Primary Sources Access &amp; Build (Plan A) - North Central</collection><collection>Primary Sources Access &amp; Build (Plan A) - Northeast</collection><collection>Primary Sources Access &amp; Build (Plan A) - South Central</collection><collection>Primary Sources Access &amp; Build (Plan A) - Southeast</collection><collection>Primary Sources Access (Plan D) - UK / I</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - APAC</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - MEA</collection><jtitle>Journal of the American Ceramic Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>MOHAPATRA, S. K.</au><au>TIKU, S. K.</au><au>KRÖR, F. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Defect Structure of Unintentionally Doped α-Al2O3 Crystals</atitle><jtitle>Journal of the American Ceramic Society</jtitle><date>1979-01</date><risdate>1979</risdate><volume>62</volume><issue>1-2</issue><spage>50</spage><epage>57</epage><pages>50-57</pages><issn>0002-7820</issn><eissn>1551-2916</eissn><abstract>Electrical conductivity and the ionic and electronic transference numbers were determined for two types of unintentionally doped single crystalline sapphire for current directions perpendicular to the r plane (1102). One was acceptor dominated and the other was initially donor (Hix) dominated, changing to acceptor domination after a prolonged anneal at 1600°C. The positions of the electronic energy levels of dominant impurities and the constants regulating the oxidation‐reduction of these impurities and of pure Al2O3 are determined. The latter shows a discrepancy with an expression reported previously.</abstract><cop>Oxford, UK</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1111/j.1151-2916.1979.tb18804.x</doi><tpages>8</tpages></addata></record>
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title The Defect Structure of Unintentionally Doped α-Al2O3 Crystals
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T11%3A47%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_wiley&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20Defect%20Structure%20of%20Unintentionally%20Doped%20%CE%B1-Al2O3%20Crystals&rft.jtitle=Journal%20of%20the%20American%20Ceramic%20Society&rft.au=MOHAPATRA,%20S.%20K.&rft.date=1979-01&rft.volume=62&rft.issue=1-2&rft.spage=50&rft.epage=57&rft.pages=50-57&rft.issn=0002-7820&rft.eissn=1551-2916&rft_id=info:doi/10.1111/j.1151-2916.1979.tb18804.x&rft_dat=%3Cproquest_wiley%3E1298375724%3C/proquest_wiley%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1298375724&rft_id=info:pmid/&rfr_iscdi=true