Admittance Spectroscopy of Polycrystalline ZnO-Bi2O3 and ZnO-BaO Systems
Admittance spectroscopy was used to characterize the bulk electron traps in polycrystalline ZnO‐Bi2O3 and ZnO‐BaO systems. Temperatures from 30 to 350 K and a frequency range from 1.0 to 33.3 kHz were used. Admittance spectra for the ZnO‐Bi2O3 system showed large variations with sintering atmosphere...
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| Veröffentlicht in: | Journal of the American Ceramic Society 1988-03, Vol.71 (3), p.184-188 |
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| container_end_page | 188 |
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| container_issue | 3 |
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| container_title | Journal of the American Ceramic Society |
| container_volume | 71 |
| creator | SHIM, YOUNGJAE CORDARO, JAMES F. |
| description | Admittance spectroscopy was used to characterize the bulk electron traps in polycrystalline ZnO‐Bi2O3 and ZnO‐BaO systems. Temperatures from 30 to 350 K and a frequency range from 1.0 to 33.3 kHz were used. Admittance spectra for the ZnO‐Bi2O3 system showed large variations with sintering atmosphere and heat treatment. A trap is observed at 0.33 eV below the conduction band edge in both systems. This trap is likely to be associated with an ionized oxygen vacancy. A possible explanation of primitive varistor characteristics in terms of the roles of the electronic defects is presented. |
| doi_str_mv | 10.1111/j.1151-2916.1988.tb05026.x |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_proquest_journals_1298375495</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1298375495</sourcerecordid><originalsourceid>FETCH-LOGICAL-i2364-3f0892082134f808e7b38685a7a8f52faa704bcf379ef49e5a7bb1dbc28aec0b3</originalsourceid><addsrcrecordid>eNo9kFtLwzAYhoMoOKf_oai3rTn0kF7JrDs4hhWnCN6ENEugtWtr0uH6701pWW4-Pt6HN8kDwC2CHrLnobAjQC6OUeihmFKvzWAAcegdz8AEBWN0DiYQQuxGFMNLcGVMYVeL-xOwmu32edvySkhn20jR6tqIuumcWjlvddkJ3ZmWl2VeSee7St2nHKfE4dVu2HjqbC0g9-YaXCheGnkzzin4XMw_kpW7SZcvyWzj5piEvksUpDGGFCPiKwqpjDJCQxrwiFMVYMV5BP1MKBLFUvmxtEGWoV0mMOVSwIxMwd3Q2-j69yBNy4r6oCt7JUM4piQK_Diw1P1IcSN4qbT9YG5Yo_M91x2LEA5xiCz2OGB_eSm7U4wg6-2ygvV2Wa-Q9XbZaJcd2XqWzBH1bYM7NOTWwvHUwPUPCyP7GPb1umTP6837IqEL9k3-Afzqfro</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1298375495</pqid></control><display><type>article</type><title>Admittance Spectroscopy of Polycrystalline ZnO-Bi2O3 and ZnO-BaO Systems</title><source>Periodicals Index Online</source><source>Access via Wiley Online Library</source><creator>SHIM, YOUNGJAE ; CORDARO, JAMES F.</creator><creatorcontrib>SHIM, YOUNGJAE ; CORDARO, JAMES F.</creatorcontrib><description>Admittance spectroscopy was used to characterize the bulk electron traps in polycrystalline ZnO‐Bi2O3 and ZnO‐BaO systems. Temperatures from 30 to 350 K and a frequency range from 1.0 to 33.3 kHz were used. Admittance spectra for the ZnO‐Bi2O3 system showed large variations with sintering atmosphere and heat treatment. A trap is observed at 0.33 eV below the conduction band edge in both systems. This trap is likely to be associated with an ionized oxygen vacancy. A possible explanation of primitive varistor characteristics in terms of the roles of the electronic defects is presented.</description><identifier>ISSN: 0002-7820</identifier><identifier>EISSN: 1551-2916</identifier><identifier>DOI: 10.1111/j.1151-2916.1988.tb05026.x</identifier><identifier>CODEN: JACTAW</identifier><language>eng</language><publisher>Oxford, UK: Blackwell Publishing Ltd</publisher><subject>Charge carriers: generation, recombination, lifetime, and trapping ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Conductivity phenomena in semiconductors and insulators ; Electronic transport in condensed matter ; Exact sciences and technology ; Physics</subject><ispartof>Journal of the American Ceramic Society, 1988-03, Vol.71 (3), p.184-188</ispartof><rights>1989 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1111%2Fj.1151-2916.1988.tb05026.x$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1111%2Fj.1151-2916.1988.tb05026.x$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,1417,23930,23931,25140,27869,27924,27925,45574,45575</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7126261$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SHIM, YOUNGJAE</creatorcontrib><creatorcontrib>CORDARO, JAMES F.</creatorcontrib><title>Admittance Spectroscopy of Polycrystalline ZnO-Bi2O3 and ZnO-BaO Systems</title><title>Journal of the American Ceramic Society</title><description>Admittance spectroscopy was used to characterize the bulk electron traps in polycrystalline ZnO‐Bi2O3 and ZnO‐BaO systems. Temperatures from 30 to 350 K and a frequency range from 1.0 to 33.3 kHz were used. Admittance spectra for the ZnO‐Bi2O3 system showed large variations with sintering atmosphere and heat treatment. A trap is observed at 0.33 eV below the conduction band edge in both systems. This trap is likely to be associated with an ionized oxygen vacancy. A possible explanation of primitive varistor characteristics in terms of the roles of the electronic defects is presented.</description><subject>Charge carriers: generation, recombination, lifetime, and trapping</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Conductivity phenomena in semiconductors and insulators</subject><subject>Electronic transport in condensed matter</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><issn>0002-7820</issn><issn>1551-2916</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><sourceid>K30</sourceid><recordid>eNo9kFtLwzAYhoMoOKf_oai3rTn0kF7JrDs4hhWnCN6ENEugtWtr0uH6701pWW4-Pt6HN8kDwC2CHrLnobAjQC6OUeihmFKvzWAAcegdz8AEBWN0DiYQQuxGFMNLcGVMYVeL-xOwmu32edvySkhn20jR6tqIuumcWjlvddkJ3ZmWl2VeSee7St2nHKfE4dVu2HjqbC0g9-YaXCheGnkzzin4XMw_kpW7SZcvyWzj5piEvksUpDGGFCPiKwqpjDJCQxrwiFMVYMV5BP1MKBLFUvmxtEGWoV0mMOVSwIxMwd3Q2-j69yBNy4r6oCt7JUM4piQK_Diw1P1IcSN4qbT9YG5Yo_M91x2LEA5xiCz2OGB_eSm7U4wg6-2ygvV2Wa-Q9XbZaJcd2XqWzBH1bYM7NOTWwvHUwPUPCyP7GPb1umTP6837IqEL9k3-Afzqfro</recordid><startdate>198803</startdate><enddate>198803</enddate><creator>SHIM, YOUNGJAE</creator><creator>CORDARO, JAMES F.</creator><general>Blackwell Publishing Ltd</general><general>Blackwell</general><general>American Ceramic Society</general><scope>BSCLL</scope><scope>IQODW</scope><scope>HDMVH</scope><scope>K30</scope><scope>PAAUG</scope><scope>PAWHS</scope><scope>PAWZZ</scope><scope>PAXOH</scope><scope>PBHAV</scope><scope>PBQSW</scope><scope>PBYQZ</scope><scope>PCIWU</scope><scope>PCMID</scope><scope>PCZJX</scope><scope>PDGRG</scope><scope>PDWWI</scope><scope>PETMR</scope><scope>PFVGT</scope><scope>PGXDX</scope><scope>PIHIL</scope><scope>PISVA</scope><scope>PJCTQ</scope><scope>PJTMS</scope><scope>PLCHJ</scope><scope>PMHAD</scope><scope>PNQDJ</scope><scope>POUND</scope><scope>PPLAD</scope><scope>PQAPC</scope><scope>PQCAN</scope><scope>PQCMW</scope><scope>PQEME</scope><scope>PQHKH</scope><scope>PQMID</scope><scope>PQNCT</scope><scope>PQNET</scope><scope>PQSCT</scope><scope>PQSET</scope><scope>PSVJG</scope><scope>PVMQY</scope><scope>PZGFC</scope></search><sort><creationdate>198803</creationdate><title>Admittance Spectroscopy of Polycrystalline ZnO-Bi2O3 and ZnO-BaO Systems</title><author>SHIM, YOUNGJAE ; CORDARO, JAMES F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i2364-3f0892082134f808e7b38685a7a8f52faa704bcf379ef49e5a7bb1dbc28aec0b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Charge carriers: generation, recombination, lifetime, and trapping</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Conductivity phenomena in semiconductors and insulators</topic><topic>Electronic transport in condensed matter</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SHIM, YOUNGJAE</creatorcontrib><creatorcontrib>CORDARO, JAMES F.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>Periodicals Index Online Segment 15</collection><collection>Periodicals Index Online</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - West</collection><collection>Primary Sources Access (Plan D) - International</collection><collection>Primary Sources Access & Build (Plan A) - MEA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Midwest</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Northeast</collection><collection>Primary Sources Access (Plan D) - Southeast</collection><collection>Primary Sources Access (Plan D) - North Central</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Southeast</collection><collection>Primary Sources Access (Plan D) - South Central</collection><collection>Primary Sources Access & Build (Plan A) - UK / I</collection><collection>Primary Sources Access (Plan D) - Canada</collection><collection>Primary Sources Access (Plan D) - EMEALA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - North Central</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - South Central</collection><collection>Primary Sources Access & Build (Plan A) - International</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - International</collection><collection>Primary Sources Access (Plan D) - West</collection><collection>Periodicals Index Online Segments 1-50</collection><collection>Primary Sources Access (Plan D) - APAC</collection><collection>Primary Sources Access (Plan D) - Midwest</collection><collection>Primary Sources Access (Plan D) - MEA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Canada</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - UK / I</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - EMEALA</collection><collection>Primary Sources Access & Build (Plan A) - APAC</collection><collection>Primary Sources Access & Build (Plan A) - Canada</collection><collection>Primary Sources Access & Build (Plan A) - West</collection><collection>Primary Sources Access & Build (Plan A) - EMEALA</collection><collection>Primary Sources Access (Plan D) - Northeast</collection><collection>Primary Sources Access & Build (Plan A) - Midwest</collection><collection>Primary Sources Access & Build (Plan A) - North Central</collection><collection>Primary Sources Access & Build (Plan A) - Northeast</collection><collection>Primary Sources Access & Build (Plan A) - South Central</collection><collection>Primary Sources Access & Build (Plan A) - Southeast</collection><collection>Primary Sources Access (Plan D) - UK / I</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - APAC</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - MEA</collection><jtitle>Journal of the American Ceramic Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SHIM, YOUNGJAE</au><au>CORDARO, JAMES F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Admittance Spectroscopy of Polycrystalline ZnO-Bi2O3 and ZnO-BaO Systems</atitle><jtitle>Journal of the American Ceramic Society</jtitle><date>1988-03</date><risdate>1988</risdate><volume>71</volume><issue>3</issue><spage>184</spage><epage>188</epage><pages>184-188</pages><issn>0002-7820</issn><eissn>1551-2916</eissn><coden>JACTAW</coden><abstract>Admittance spectroscopy was used to characterize the bulk electron traps in polycrystalline ZnO‐Bi2O3 and ZnO‐BaO systems. Temperatures from 30 to 350 K and a frequency range from 1.0 to 33.3 kHz were used. Admittance spectra for the ZnO‐Bi2O3 system showed large variations with sintering atmosphere and heat treatment. A trap is observed at 0.33 eV below the conduction band edge in both systems. This trap is likely to be associated with an ionized oxygen vacancy. A possible explanation of primitive varistor characteristics in terms of the roles of the electronic defects is presented.</abstract><cop>Oxford, UK</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1111/j.1151-2916.1988.tb05026.x</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0002-7820 |
| ispartof | Journal of the American Ceramic Society, 1988-03, Vol.71 (3), p.184-188 |
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| language | eng |
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| source | Periodicals Index Online; Access via Wiley Online Library |
| subjects | Charge carriers: generation, recombination, lifetime, and trapping Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Physics |
| title | Admittance Spectroscopy of Polycrystalline ZnO-Bi2O3 and ZnO-BaO Systems |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-30T02%3A14%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Admittance%20Spectroscopy%20of%20Polycrystalline%20ZnO-Bi2O3%20and%20ZnO-BaO%20Systems&rft.jtitle=Journal%20of%20the%20American%20Ceramic%20Society&rft.au=SHIM,%20YOUNGJAE&rft.date=1988-03&rft.volume=71&rft.issue=3&rft.spage=184&rft.epage=188&rft.pages=184-188&rft.issn=0002-7820&rft.eissn=1551-2916&rft.coden=JACTAW&rft_id=info:doi/10.1111/j.1151-2916.1988.tb05026.x&rft_dat=%3Cproquest_pasca%3E1298375495%3C/proquest_pasca%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1298375495&rft_id=info:pmid/&rfr_iscdi=true |