Transient photoconductivity in n-type a-Si: H
The long-time transient photocurrent decay in annealed and light-exposed P-doped a-Si: H is examined experimentally and by numerical modelling. The decay is a dispersive power law with sublinear index, extending to times longer than 1s, and the decay rate increases with temperature. Light exposure d...
Gespeichert in:
| Veröffentlicht in: | Philosophical magazine letters 1987-04, Vol.55 (4), p.189-195 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 195 |
|---|---|
| container_issue | 4 |
| container_start_page | 189 |
| container_title | Philosophical magazine letters |
| container_volume | 55 |
| creator | Main, C. Russell, R. Berkin, J. Marshall, J. M. |
| description | The long-time transient photocurrent decay in annealed and light-exposed P-doped a-Si: H is examined experimentally and by numerical modelling. The decay is a dispersive power law with sublinear index, extending to times longer than 1s, and the decay rate increases with temperature. Light exposure dramatically decreases the decay amplitude but does not affect the rate of decay. The phenomenon is discussed in terms of a comprehensive multiple-trapping model in which transport of thermalized electrons is essentially non-dispersive, and recombination of free carriers via defects is dispersive, owing to continued thermalization of excess holes. The slower recombination step is free-hole capture by D
−
states, while the decay of the total excess ensemble is controlled by hole release from valence-band tail traps. The index of the excess photoelectron decay provides information on the valence-band tail states, which are exponentially distributed, with a characteristic energy estimated as 0·06 eV. |
| doi_str_mv | 10.1080/09500838708207555 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_proquest_journals_1298089048</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1298089048</sourcerecordid><originalsourceid>FETCH-LOGICAL-c353t-6c3c0057996ad6558b1c87046a0539c62c51b6c456e54177eeb5a15cbdc2e2953</originalsourceid><addsrcrecordid>eNp1kDFPwzAQhS0EEqXwA9giwWo4xznHRiwIAUWqxECZI8dxhKs2DrYLyr8nVQsLYrrhvvfe3SPknMEVAwnXoBBAclmCzKFExAMyYVzklAMXh2Sy3dMRUMfkJMYlABSqwAmhi6C76GyXsv7dJ29812xMcp8uDZnrso6mobeZpq_uJpudkqNWr6I9288peXt8WNzP6Pzl6fn-bk4NR56oMNwAYKmU0I1AlDUz42WF0IBcGZEbZLUwBQqLBStLa2vUDE3dmNzmCvmUXOx8--A_Njamauk3oRsjK5YrCVJBIUeK7SgTfIzBtlUf3FqHoWJQbVup_rQyai73zjoavWrH742Lv8KykDkv1Yjd7jDXtT6s9ZcPq6ZKelj58KPh_6d8A9fHcVY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1298089048</pqid></control><display><type>article</type><title>Transient photoconductivity in n-type a-Si: H</title><source>Taylor & Francis:Master (3349 titles)</source><source>Periodicals Index Online</source><creator>Main, C. ; Russell, R. ; Berkin, J. ; Marshall, J. M.</creator><creatorcontrib>Main, C. ; Russell, R. ; Berkin, J. ; Marshall, J. M.</creatorcontrib><description>The long-time transient photocurrent decay in annealed and light-exposed P-doped a-Si: H is examined experimentally and by numerical modelling. The decay is a dispersive power law with sublinear index, extending to times longer than 1s, and the decay rate increases with temperature. Light exposure dramatically decreases the decay amplitude but does not affect the rate of decay. The phenomenon is discussed in terms of a comprehensive multiple-trapping model in which transport of thermalized electrons is essentially non-dispersive, and recombination of free carriers via defects is dispersive, owing to continued thermalization of excess holes. The slower recombination step is free-hole capture by D
−
states, while the decay of the total excess ensemble is controlled by hole release from valence-band tail traps. The index of the excess photoelectron decay provides information on the valence-band tail states, which are exponentially distributed, with a characteristic energy estimated as 0·06 eV.</description><identifier>ISSN: 0950-0839</identifier><identifier>EISSN: 1362-3036</identifier><identifier>DOI: 10.1080/09500838708207555</identifier><identifier>CODEN: PMLEEG</identifier><language>eng</language><publisher>London: Taylor & Francis Group</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; Physics</subject><ispartof>Philosophical magazine letters, 1987-04, Vol.55 (4), p.189-195</ispartof><rights>Copyright Taylor & Francis Group, LLC 1987</rights><rights>1988 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c353t-6c3c0057996ad6558b1c87046a0539c62c51b6c456e54177eeb5a15cbdc2e2953</citedby><cites>FETCH-LOGICAL-c353t-6c3c0057996ad6558b1c87046a0539c62c51b6c456e54177eeb5a15cbdc2e2953</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.tandfonline.com/doi/pdf/10.1080/09500838708207555$$EPDF$$P50$$Ginformaworld$$H</linktopdf><linktohtml>$$Uhttps://www.tandfonline.com/doi/full/10.1080/09500838708207555$$EHTML$$P50$$Ginformaworld$$H</linktohtml><link.rule.ids>314,776,780,27846,27901,27902,59620,60409</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7482379$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Main, C.</creatorcontrib><creatorcontrib>Russell, R.</creatorcontrib><creatorcontrib>Berkin, J.</creatorcontrib><creatorcontrib>Marshall, J. M.</creatorcontrib><title>Transient photoconductivity in n-type a-Si: H</title><title>Philosophical magazine letters</title><description>The long-time transient photocurrent decay in annealed and light-exposed P-doped a-Si: H is examined experimentally and by numerical modelling. The decay is a dispersive power law with sublinear index, extending to times longer than 1s, and the decay rate increases with temperature. Light exposure dramatically decreases the decay amplitude but does not affect the rate of decay. The phenomenon is discussed in terms of a comprehensive multiple-trapping model in which transport of thermalized electrons is essentially non-dispersive, and recombination of free carriers via defects is dispersive, owing to continued thermalization of excess holes. The slower recombination step is free-hole capture by D
−
states, while the decay of the total excess ensemble is controlled by hole release from valence-band tail traps. The index of the excess photoelectron decay provides information on the valence-band tail states, which are exponentially distributed, with a characteristic energy estimated as 0·06 eV.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><issn>0950-0839</issn><issn>1362-3036</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><sourceid>K30</sourceid><recordid>eNp1kDFPwzAQhS0EEqXwA9giwWo4xznHRiwIAUWqxECZI8dxhKs2DrYLyr8nVQsLYrrhvvfe3SPknMEVAwnXoBBAclmCzKFExAMyYVzklAMXh2Sy3dMRUMfkJMYlABSqwAmhi6C76GyXsv7dJ29812xMcp8uDZnrso6mobeZpq_uJpudkqNWr6I9288peXt8WNzP6Pzl6fn-bk4NR56oMNwAYKmU0I1AlDUz42WF0IBcGZEbZLUwBQqLBStLa2vUDE3dmNzmCvmUXOx8--A_Njamauk3oRsjK5YrCVJBIUeK7SgTfIzBtlUf3FqHoWJQbVup_rQyai73zjoavWrH742Lv8KykDkv1Yjd7jDXtT6s9ZcPq6ZKelj58KPh_6d8A9fHcVY</recordid><startdate>19870401</startdate><enddate>19870401</enddate><creator>Main, C.</creator><creator>Russell, R.</creator><creator>Berkin, J.</creator><creator>Marshall, J. M.</creator><general>Taylor & Francis Group</general><general>Taylor & Francis</general><general>Taylor and Francis</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>HAGHG</scope><scope>IZSXY</scope><scope>K30</scope><scope>PAAUG</scope><scope>PAWHS</scope><scope>PAWZZ</scope><scope>PAXOH</scope><scope>PBHAV</scope><scope>PBQSW</scope><scope>PBYQZ</scope><scope>PCIWU</scope><scope>PCMID</scope><scope>PCZJX</scope><scope>PDGRG</scope><scope>PDWWI</scope><scope>PETMR</scope><scope>PFVGT</scope><scope>PGXDX</scope><scope>PIHIL</scope><scope>PISVA</scope><scope>PJCTQ</scope><scope>PJTMS</scope><scope>PLCHJ</scope><scope>PMHAD</scope><scope>PNQDJ</scope><scope>POUND</scope><scope>PPLAD</scope><scope>PQAPC</scope><scope>PQCAN</scope><scope>PQCMW</scope><scope>PQEME</scope><scope>PQHKH</scope><scope>PQMID</scope><scope>PQNCT</scope><scope>PQNET</scope><scope>PQSCT</scope><scope>PQSET</scope><scope>PSVJG</scope><scope>PVMQY</scope><scope>PZGFC</scope></search><sort><creationdate>19870401</creationdate><title>Transient photoconductivity in n-type a-Si: H</title><author>Main, C. ; Russell, R. ; Berkin, J. ; Marshall, J. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c353t-6c3c0057996ad6558b1c87046a0539c62c51b6c456e54177eeb5a15cbdc2e2953</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1987</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Main, C.</creatorcontrib><creatorcontrib>Russell, R.</creatorcontrib><creatorcontrib>Berkin, J.</creatorcontrib><creatorcontrib>Marshall, J. M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Periodicals Index Online Segment 12</collection><collection>Periodicals Index Online Segment 30</collection><collection>Periodicals Index Online</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - West</collection><collection>Primary Sources Access (Plan D) - International</collection><collection>Primary Sources Access & Build (Plan A) - MEA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Midwest</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Northeast</collection><collection>Primary Sources Access (Plan D) - Southeast</collection><collection>Primary Sources Access (Plan D) - North Central</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Southeast</collection><collection>Primary Sources Access (Plan D) - South Central</collection><collection>Primary Sources Access & Build (Plan A) - UK / I</collection><collection>Primary Sources Access (Plan D) - Canada</collection><collection>Primary Sources Access (Plan D) - EMEALA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - North Central</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - South Central</collection><collection>Primary Sources Access & Build (Plan A) - International</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - International</collection><collection>Primary Sources Access (Plan D) - West</collection><collection>Periodicals Index Online Segments 1-50</collection><collection>Primary Sources Access (Plan D) - APAC</collection><collection>Primary Sources Access (Plan D) - Midwest</collection><collection>Primary Sources Access (Plan D) - MEA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Canada</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - UK / I</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - EMEALA</collection><collection>Primary Sources Access & Build (Plan A) - APAC</collection><collection>Primary Sources Access & Build (Plan A) - Canada</collection><collection>Primary Sources Access & Build (Plan A) - West</collection><collection>Primary Sources Access & Build (Plan A) - EMEALA</collection><collection>Primary Sources Access (Plan D) - Northeast</collection><collection>Primary Sources Access & Build (Plan A) - Midwest</collection><collection>Primary Sources Access & Build (Plan A) - North Central</collection><collection>Primary Sources Access & Build (Plan A) - Northeast</collection><collection>Primary Sources Access & Build (Plan A) - South Central</collection><collection>Primary Sources Access & Build (Plan A) - Southeast</collection><collection>Primary Sources Access (Plan D) - UK / I</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - APAC</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - MEA</collection><jtitle>Philosophical magazine letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Main, C.</au><au>Russell, R.</au><au>Berkin, J.</au><au>Marshall, J. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transient photoconductivity in n-type a-Si: H</atitle><jtitle>Philosophical magazine letters</jtitle><date>1987-04-01</date><risdate>1987</risdate><volume>55</volume><issue>4</issue><spage>189</spage><epage>195</epage><pages>189-195</pages><issn>0950-0839</issn><eissn>1362-3036</eissn><coden>PMLEEG</coden><abstract>The long-time transient photocurrent decay in annealed and light-exposed P-doped a-Si: H is examined experimentally and by numerical modelling. The decay is a dispersive power law with sublinear index, extending to times longer than 1s, and the decay rate increases with temperature. Light exposure dramatically decreases the decay amplitude but does not affect the rate of decay. The phenomenon is discussed in terms of a comprehensive multiple-trapping model in which transport of thermalized electrons is essentially non-dispersive, and recombination of free carriers via defects is dispersive, owing to continued thermalization of excess holes. The slower recombination step is free-hole capture by D
−
states, while the decay of the total excess ensemble is controlled by hole release from valence-band tail traps. The index of the excess photoelectron decay provides information on the valence-band tail states, which are exponentially distributed, with a characteristic energy estimated as 0·06 eV.</abstract><cop>London</cop><pub>Taylor & Francis Group</pub><doi>10.1080/09500838708207555</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0950-0839 |
| ispartof | Philosophical magazine letters, 1987-04, Vol.55 (4), p.189-195 |
| issn | 0950-0839 1362-3036 |
| language | eng |
| recordid | cdi_proquest_journals_1298089048 |
| source | Taylor & Francis:Master (3349 titles); Periodicals Index Online |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Physics |
| title | Transient photoconductivity in n-type a-Si: H |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T10%3A42%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Transient%20photoconductivity%20in%20n-type%20a-Si:%20H&rft.jtitle=Philosophical%20magazine%20letters&rft.au=Main,%20C.&rft.date=1987-04-01&rft.volume=55&rft.issue=4&rft.spage=189&rft.epage=195&rft.pages=189-195&rft.issn=0950-0839&rft.eissn=1362-3036&rft.coden=PMLEEG&rft_id=info:doi/10.1080/09500838708207555&rft_dat=%3Cproquest_pasca%3E1298089048%3C/proquest_pasca%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1298089048&rft_id=info:pmid/&rfr_iscdi=true |