Search for Superconductivity in Doped Amorphous Carbon Thin Films
In this paper, we have searched for superconductivity by measuring ohmic resistivity as a function of temperature in amorphous carbon films deposited by pulsed laser deposition and doped by ion implantation with sulfur and phosphorus ions. The doping concentrations were varied from 0.0003 to 4 Vol%...
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| Veröffentlicht in: | IEEE transactions on applied superconductivity 2013-06, Vol.23 (3), p.7000205-7000205 |
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| container_title | IEEE transactions on applied superconductivity |
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| creator | Pierce, Benjamin T. Burke, Jack L. Brunke, Lyle B. Bullard, Thomas J. Vier, David C. Haugan, Timothy J. |
| description | In this paper, we have searched for superconductivity by measuring ohmic resistivity as a function of temperature in amorphous carbon films deposited by pulsed laser deposition and doped by ion implantation with sulfur and phosphorus ions. The doping concentrations were varied from 0.0003 to 4 Vol% for sulfur and 0.0003 to 1 Vol% for phosphorus. Previous efforts have studied doping of carbon-family materials such as highly oriented pyrolytic graphite, diamond-like carbon, and graphite/graphene, which have yielded critical temperatures lower than 20 K. In this study, amorphous carbon films doped with 2.55 \times 10^{12}\ \hbox{ions/cm}^{2} phosphorus concentration showed a distinct change from semiconducting to metallic behavior and a dramatic 10 000-fold decrease in resistivity below 100 K as compared to undoped films. Sulfur-doped films with 2.55 \times 10^{12}\ \hbox{ions/cm}^{2} concentration showed up to a 100-fold decrease in resistivity below 100 K as compared to undoped samples. While evidence of superconductivity was not observed, significant improvements in conductivity were noted below 100 K. |
| doi_str_mv | 10.1109/TASC.2013.2238572 |
| format | Article |
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The doping concentrations were varied from 0.0003 to 4 Vol% for sulfur and 0.0003 to 1 Vol% for phosphorus. Previous efforts have studied doping of carbon-family materials such as highly oriented pyrolytic graphite, diamond-like carbon, and graphite/graphene, which have yielded critical temperatures lower than 20 K. In this study, amorphous carbon films doped with 2.55 \times 10^{12}\ \hbox{ions/cm}^{2} phosphorus concentration showed a distinct change from semiconducting to metallic behavior and a dramatic 10 000-fold decrease in resistivity below 100 K as compared to undoped films. Sulfur-doped films with 2.55 \times 10^{12}\ \hbox{ions/cm}^{2} concentration showed up to a 100-fold decrease in resistivity below 100 K as compared to undoped samples. While evidence of superconductivity was not observed, significant improvements in conductivity were noted below 100 K.</description><identifier>ISSN: 1051-8223</identifier><identifier>EISSN: 1558-2515</identifier><identifier>DOI: 10.1109/TASC.2013.2238572</identifier><identifier>CODEN: ITASE9</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amorphous ; Annealing ; Applied sciences ; Carbon ; Conductivity ; Doping ; Electrical resistivity ; Electronics ; Exact sciences and technology ; Graphene ; Graphite ; ion implantation ; Microelectronic fabrication (materials and surfaces technology) ; Phosphorus ; Searching ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Sulfur ; superconducting materials ; Superconductivity ; Thin films</subject><ispartof>IEEE transactions on applied superconductivity, 2013-06, Vol.23 (3), p.7000205-7000205</ispartof><rights>2014 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jun 2013</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c399t-d16d87b30e687cd6a23f1658c12ba8ec2799ca1edce74c181ba5d71f9273c8b93</citedby><cites>FETCH-LOGICAL-c399t-d16d87b30e687cd6a23f1658c12ba8ec2799ca1edce74c181ba5d71f9273c8b93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6407827$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,792,23909,23910,25118,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6407827$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27529740$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Pierce, Benjamin T.</creatorcontrib><creatorcontrib>Burke, Jack L.</creatorcontrib><creatorcontrib>Brunke, Lyle B.</creatorcontrib><creatorcontrib>Bullard, Thomas J.</creatorcontrib><creatorcontrib>Vier, David C.</creatorcontrib><creatorcontrib>Haugan, Timothy J.</creatorcontrib><title>Search for Superconductivity in Doped Amorphous Carbon Thin Films</title><title>IEEE transactions on applied superconductivity</title><addtitle>TASC</addtitle><description>In this paper, we have searched for superconductivity by measuring ohmic resistivity as a function of temperature in amorphous carbon films deposited by pulsed laser deposition and doped by ion implantation with sulfur and phosphorus ions. The doping concentrations were varied from 0.0003 to 4 Vol% for sulfur and 0.0003 to 1 Vol% for phosphorus. Previous efforts have studied doping of carbon-family materials such as highly oriented pyrolytic graphite, diamond-like carbon, and graphite/graphene, which have yielded critical temperatures lower than 20 K. In this study, amorphous carbon films doped with 2.55 \times 10^{12}\ \hbox{ions/cm}^{2} phosphorus concentration showed a distinct change from semiconducting to metallic behavior and a dramatic 10 000-fold decrease in resistivity below 100 K as compared to undoped films. Sulfur-doped films with 2.55 \times 10^{12}\ \hbox{ions/cm}^{2} concentration showed up to a 100-fold decrease in resistivity below 100 K as compared to undoped samples. While evidence of superconductivity was not observed, significant improvements in conductivity were noted below 100 K.</description><subject>Amorphous</subject><subject>Annealing</subject><subject>Applied sciences</subject><subject>Carbon</subject><subject>Conductivity</subject><subject>Doping</subject><subject>Electrical resistivity</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Graphene</subject><subject>Graphite</subject><subject>ion implantation</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Phosphorus</subject><subject>Searching</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Sulfur</subject><subject>superconducting materials</subject><subject>Superconductivity</subject><subject>Thin films</subject><issn>1051-8223</issn><issn>1558-2515</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkFFLwzAUhYsoOKc_QHwpiOBLZ27SNMljmU6FgQ-bzyFNU9bRNjVphf17Uzb24NO9cL5zuPdE0T2gBQASL9t8s1xgBGSBMeGU4YtoBpTyBFOgl2FHFBIetOvoxvs9QpDylM6ifGOU07u4si7ejL1x2nblqIf6tx4Ocd3Fr7Y3ZZy31vU7O_p4qVxhu3i7C9qqblp_G11VqvHm7jTn0ffqbbv8SNZf75_LfJ1oIsSQlJCVnBUEmYwzXWYKkwoyyjXgQnGjMRNCKzClNizVwKFQtGRQCcyI5oUg8-j5mNs7-zMaP8i29to0jepMOEwCSUVKOEMT-vgP3dvRdeE6CZinOBNcQKDgSGlnvXemkr2rW-UOEpCcSpVTqXIqVZ5KDZ6nU7LyWjWVU52u_dmIGcWCpShwD0euNsac5SxFjId__gBuTX6X</recordid><startdate>20130601</startdate><enddate>20130601</enddate><creator>Pierce, Benjamin T.</creator><creator>Burke, Jack L.</creator><creator>Brunke, Lyle B.</creator><creator>Bullard, Thomas J.</creator><creator>Vier, David C.</creator><creator>Haugan, Timothy J.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Sulfur</topic><topic>superconducting materials</topic><topic>Superconductivity</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pierce, Benjamin T.</creatorcontrib><creatorcontrib>Burke, Jack L.</creatorcontrib><creatorcontrib>Brunke, Lyle B.</creatorcontrib><creatorcontrib>Bullard, Thomas J.</creatorcontrib><creatorcontrib>Vier, David C.</creatorcontrib><creatorcontrib>Haugan, Timothy J.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on applied superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Pierce, Benjamin T.</au><au>Burke, Jack L.</au><au>Brunke, Lyle B.</au><au>Bullard, Thomas J.</au><au>Vier, David C.</au><au>Haugan, Timothy J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Search for Superconductivity in Doped Amorphous Carbon Thin Films</atitle><jtitle>IEEE transactions on applied superconductivity</jtitle><stitle>TASC</stitle><date>2013-06-01</date><risdate>2013</risdate><volume>23</volume><issue>3</issue><spage>7000205</spage><epage>7000205</epage><pages>7000205-7000205</pages><issn>1051-8223</issn><eissn>1558-2515</eissn><coden>ITASE9</coden><abstract>In this paper, we have searched for superconductivity by measuring ohmic resistivity as a function of temperature in amorphous carbon films deposited by pulsed laser deposition and doped by ion implantation with sulfur and phosphorus ions. The doping concentrations were varied from 0.0003 to 4 Vol% for sulfur and 0.0003 to 1 Vol% for phosphorus. Previous efforts have studied doping of carbon-family materials such as highly oriented pyrolytic graphite, diamond-like carbon, and graphite/graphene, which have yielded critical temperatures lower than 20 K. In this study, amorphous carbon films doped with 2.55 \times 10^{12}\ \hbox{ions/cm}^{2} phosphorus concentration showed a distinct change from semiconducting to metallic behavior and a dramatic 10 000-fold decrease in resistivity below 100 K as compared to undoped films. Sulfur-doped films with 2.55 \times 10^{12}\ \hbox{ions/cm}^{2} concentration showed up to a 100-fold decrease in resistivity below 100 K as compared to undoped samples. 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| subjects | Amorphous Annealing Applied sciences Carbon Conductivity Doping Electrical resistivity Electronics Exact sciences and technology Graphene Graphite ion implantation Microelectronic fabrication (materials and surfaces technology) Phosphorus Searching Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sulfur superconducting materials Superconductivity Thin films |
| title | Search for Superconductivity in Doped Amorphous Carbon Thin Films |
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