Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system

High‐resolution X‐ray diffraction in coplanar and noncoplanar geometries has been used to investigate the influence of an SiNx nano‐mask in the reduction of the threading dislocation (TD) density of high‐quality AlGaN epitaxial layers grown on sapphire substrates. Our developed model, based on a Mon...

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Veröffentlicht in:	Journal of applied crystallography 2013-02, Vol.46 (1), p.120-127
Hauptverfasser:	Lazarev, S., Barchuk, M., Bauer, S., Forghani, K., Holý, V., Scholz, F., Baumbach, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystallography Diffraction epitaxial layers high-resolution X-ray diffraction Monte Carlo simulation nano-masking Substrates threading dislocation density X-rays
Online-Zugang:	Volltext
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