An Ultra Low-Power Dual-Band IR-UWB Transmitter in 130-nm CMOS

In this brief, a 0-960-MHz/3.1-5-GHz dual-band ultra low-power impulse-radio ultrawideband transmitter is presented. The pulse transmitter integrated circuit is fabricated using a 130-nm CMOS process with the core die area of 0.1 mm 2 . At 1-MHz pulse repetition frequency, the power consumption valu...

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Veröffentlicht in:	IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2012-11, Vol.59 (11), p.701-705
Hauptverfasser:	Batur, O. Z., Akdag, E., Akkurt, H. K., Oncu, A., Koca, M., Dundar, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Band pass filters Bands Circuits CMOS CMOS integrated circuits Conversion digital Dual band impulse radio low power Power consumption Pulse generation pulse generator Pulse repetition frequency Radio transmitters radio-frequency (RF) integrated circuit Semiconductor device measurement transmitter Transmitters Ultrawideband ultrawideband (UWB)
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Beschreibung
Zusammenfassung:	In this brief, a 0-960-MHz/3.1-5-GHz dual-band ultra low-power impulse-radio ultrawideband transmitter is presented. The pulse transmitter integrated circuit is fabricated using a 130-nm CMOS process with the core die area of 0.1 mm 2 . At 1-MHz pulse repetition frequency, the power consumption values are measured in the lower and the upper bands as 5.6 and 31 μW, respectively. The lower and the upper band "off-time" power consumptions of the transmitter are 0.36 and 1.7 μW, respectively. The dc-to-radio-frequency conversion efficiencies are 11.1% in the lower band and 4.8% in the upper band.
ISSN:	1549-7747 1558-3791
DOI:	10.1109/TCSII.2012.2218474