The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs

The large signal characteristics of Cu-gate and Ni/Au-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) were compared. The tested devices were fabricated on two different parts of the same wafer following the same fabrication steps, the only difference being in the Schottky contact material....

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Veröffentlicht in:	Journal of electronic materials 2013-01, Vol.42 (1), p.15-20
Hauptverfasser:	Esposto, Michele, Lecce, Valerio Di, Bonaiuti, Matteo, Chini, Alessandro
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Characterization and Evaluation of Materials Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Copper Cross-disciplinary physics: materials science rheology Diffusion interface formation Electronics Electronics and Microelectronics Electrons Exact sciences and technology Instrumentation Materials Science Methods of deposition of films and coatings film growth and epitaxy Optical and Electronic Materials Physics Radio frequency Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid State Physics Solid surfaces and solid-solid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Transistors
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