Acoustically coupled thickness-mode AIN-on-Si band-pass filters-part I: principle and devices

In this, the first of two papers, we present the working principle and the implementation of laterally acoustically coupled thickness-mode thin-film piezoelectric-on-substrate (TPoS) filters. This type of filter offers low insertion loss and small bandwidth in a broad frequency range- from a few hun...

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Veröffentlicht in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control ferroelectrics, and frequency control, 2012-10, Vol.59 (10), p.2262-2269
Hauptverfasser: Wanling Pan, Thakar, V. A., Rais-Zadeh, M., Ayazi, F.
Format: Artikel
Sprache:eng
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Zusammenfassung:In this, the first of two papers, we present the working principle and the implementation of laterally acoustically coupled thickness-mode thin-film piezoelectric-on-substrate (TPoS) filters. This type of filter offers low insertion loss and small bandwidth in a broad frequency range- from a few hundred megahertz up to a few gigahertz-and occupy a small chip area. In this paper, we discuss several design concerns, including the choice of materials for TPoS filters. We demonstrate a design for an air-suspended AlN-on-Si filter, which offers a low insertion loss of 2.4 dB at 2.877 GHz. The bandwidth of this filter is 12 MHz with a return loss of better than 30 dB. In Part II of this paper, we present a comprehensive analysis of the effect of physical layout parameters on the frequency response of TPoS filters.
ISSN:0885-3010
1525-8955
DOI:10.1109/TUFFC.2012.2451