Micromagnetic Studies of Co/Pt Multilayers With Perpendicular Anisotropy
Two micromagnetic models, Model A with the polycrystalline microstructure and Model B with just regular mesh, are set up to simulate the hysteresis loops of Co/Pt multilayers with perpendicular anisotropy. In both models, a defect region on a scale of 100 nm is introduced in any Co film with only tw...
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| Veröffentlicht in: | IEEE transactions on magnetics 2012-11, Vol.48 (11), p.3438-3441 |
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| container_title | IEEE transactions on magnetics |
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| creator | Wang, Yi Wei, Dan Han, Xiu-Feng Gao, Kai-Zhong |
| description | Two micromagnetic models, Model A with the polycrystalline microstructure and Model B with just regular mesh, are set up to simulate the hysteresis loops of Co/Pt multilayers with perpendicular anisotropy. In both models, a defect region on a scale of 100 nm is introduced in any Co film with only two atomic layers, which plays a key role in this simulation. The magnetic anisotropy constant K of cells in the defect region is weakened compare to the K out of the defect. The simulated M-H loops express the characteristics of the experiments well. The loops of a series of [Co/Pt] n multilayers with different repetition period also agree with experiment well. Moreover, the movement of reversed domain wall during magnetization reversal is observed in this simulation. |
| doi_str_mv | 10.1109/TMAG.2012.2196989 |
| format | Article |
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In both models, a defect region on a scale of 100 nm is introduced in any Co film with only two atomic layers, which plays a key role in this simulation. The magnetic anisotropy constant K of cells in the defect region is weakened compare to the K out of the defect. The simulated M-H loops express the characteristics of the experiments well. The loops of a series of [Co/Pt] n multilayers with different repetition period also agree with experiment well. Moreover, the movement of reversed domain wall during magnetization reversal is observed in this simulation.</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/TMAG.2012.2196989</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Anisotropic magnetoresistance ; Co/Pt multilayer ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; M-H loop ; Magnetic hysteresis ; Magnetic tunneling ; Magnetism ; Magnetization ; Materials science ; Micromagnetics ; Microstructure ; Nonhomogeneous media ; Other topics in materials science ; perpendicular anisotropy ; Physics ; spin valve</subject><ispartof>IEEE transactions on magnetics, 2012-11, Vol.48 (11), p.3438-3441</ispartof><rights>2014 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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In both models, a defect region on a scale of 100 nm is introduced in any Co film with only two atomic layers, which plays a key role in this simulation. The magnetic anisotropy constant K of cells in the defect region is weakened compare to the K out of the defect. The simulated M-H loops express the characteristics of the experiments well. The loops of a series of [Co/Pt] n multilayers with different repetition period also agree with experiment well. Moreover, the movement of reversed domain wall during magnetization reversal is observed in this simulation.</description><subject>Anisotropic magnetoresistance</subject><subject>Co/Pt multilayer</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>M-H loop</subject><subject>Magnetic hysteresis</subject><subject>Magnetic tunneling</subject><subject>Magnetism</subject><subject>Magnetization</subject><subject>Materials science</subject><subject>Micromagnetics</subject><subject>Microstructure</subject><subject>Nonhomogeneous media</subject><subject>Other topics in materials science</subject><subject>perpendicular anisotropy</subject><subject>Physics</subject><subject>spin valve</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEFLAzEQhYMoWKs_QLwsiMdtM0k2TY6laCu0WLDiMaTZRFO2u2uye-i_N6Wlp-Ex783wPoQeAY8AsBxvVtP5iGAgIwKSSyGv0AAkgxxjLq_RAGMQuWSc3aK7GHdJsgLwAC1W3oRmr39q23mTfXZ96W3MGpfNmvG6y1Z91flKH2yI2bfvfrO1Da2tS2_6SodsWvvYdKFpD_foxukq2ofzHKKvt9fNbJEvP-bvs-kyN5TQLte6JM5S46Aklm5xUhMHXDNwEyYLIa3bbp3TZKudcJJSJzgzssCixNJiS4fo-XS3Dc1fb2Ondk0f6vRSAQAVRWpPkgtOrlQuxmCdaoPf63BQgNURmDoCU0dg6gwsZV7Ol3U0unJB18bHS5BwLgo2geR7Ovm8tfay5pQSKSj9B8PNdNg</recordid><startdate>20121101</startdate><enddate>20121101</enddate><creator>Wang, Yi</creator><creator>Wei, Dan</creator><creator>Han, Xiu-Feng</creator><creator>Gao, Kai-Zhong</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20121101</creationdate><title>Micromagnetic Studies of Co/Pt Multilayers With Perpendicular Anisotropy</title><author>Wang, Yi ; Wei, Dan ; Han, Xiu-Feng ; Gao, Kai-Zhong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c323t-aad2fe3cf1d2e3b0d2f7f16a41f749589efbbffa2baf8f933f864c9508d09e0e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Anisotropic magnetoresistance</topic><topic>Co/Pt multilayer</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>M-H loop</topic><topic>Magnetic hysteresis</topic><topic>Magnetic tunneling</topic><topic>Magnetism</topic><topic>Magnetization</topic><topic>Materials science</topic><topic>Micromagnetics</topic><topic>Microstructure</topic><topic>Nonhomogeneous media</topic><topic>Other topics in materials science</topic><topic>perpendicular anisotropy</topic><topic>Physics</topic><topic>spin valve</topic><toplevel>online_resources</toplevel><creatorcontrib>Wang, Yi</creatorcontrib><creatorcontrib>Wei, Dan</creatorcontrib><creatorcontrib>Han, Xiu-Feng</creatorcontrib><creatorcontrib>Gao, Kai-Zhong</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on magnetics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, Yi</au><au>Wei, Dan</au><au>Han, Xiu-Feng</au><au>Gao, Kai-Zhong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Micromagnetic Studies of Co/Pt Multilayers With Perpendicular Anisotropy</atitle><jtitle>IEEE transactions on magnetics</jtitle><stitle>TMAG</stitle><date>2012-11-01</date><risdate>2012</risdate><volume>48</volume><issue>11</issue><spage>3438</spage><epage>3441</epage><pages>3438-3441</pages><issn>0018-9464</issn><eissn>1941-0069</eissn><coden>IEMGAQ</coden><abstract>Two micromagnetic models, Model A with the polycrystalline microstructure and Model B with just regular mesh, are set up to simulate the hysteresis loops of Co/Pt multilayers with perpendicular anisotropy. In both models, a defect region on a scale of 100 nm is introduced in any Co film with only two atomic layers, which plays a key role in this simulation. The magnetic anisotropy constant K of cells in the defect region is weakened compare to the K out of the defect. The simulated M-H loops express the characteristics of the experiments well. The loops of a series of [Co/Pt] n multilayers with different repetition period also agree with experiment well. Moreover, the movement of reversed domain wall during magnetization reversal is observed in this simulation.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMAG.2012.2196989</doi><tpages>4</tpages></addata></record> |
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| subjects | Anisotropic magnetoresistance Co/Pt multilayer Cross-disciplinary physics: materials science rheology Exact sciences and technology M-H loop Magnetic hysteresis Magnetic tunneling Magnetism Magnetization Materials science Micromagnetics Microstructure Nonhomogeneous media Other topics in materials science perpendicular anisotropy Physics spin valve |
| title | Micromagnetic Studies of Co/Pt Multilayers With Perpendicular Anisotropy |
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