Calculation of the gate current due to injection of hot electrons into the subgate oxide of a submicrometer MOS field-effect transistor
The gate current of a submicrometer MOS field-effect transistor is calculated using the "lucky electron" model. The main parameters of the model are estimated based on results of a kinetic Monte Carlo simulation of the electron transport.[PUBLICATION ABSTRACT]
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| Veröffentlicht in: | Journal of engineering physics and thermophysics 1998-05, Vol.71 (3), p.532-535 |
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| container_end_page | 535 |
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| container_issue | 3 |
| container_start_page | 532 |
| container_title | Journal of engineering physics and thermophysics |
| container_volume | 71 |
| creator | BORZDOV, V. M BOREIKO, N. P GALENCHIK, V. O ZHEVNYAK, O. G KOMAROV, F. F |
| description | The gate current of a submicrometer MOS field-effect transistor is calculated using the "lucky electron" model. The main parameters of the model are estimated based on results of a kinetic Monte Carlo simulation of the electron transport.[PUBLICATION ABSTRACT] |
| doi_str_mv | 10.1007/bf02682540 |
| format | Article |
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| issn | 1062-0125 1573-871X |
| language | eng |
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| subjects | Applied sciences Electronics Exact sciences and technology Monte Carlo simulation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Studies Transistors |
| title | Calculation of the gate current due to injection of hot electrons into the subgate oxide of a submicrometer MOS field-effect transistor |
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