Performance Improvement of AlN-GaN-Based Intersubband Detectors by Using Quantum Dots

We report a strong performance improvement for 1.55-μm AIN-GaN-based intersubband photodetectors. Thanks to the use of quantum dots (QDs) instead of quantum wells (QWs), a factor of 60 could be gained in terms of maximum responsivity. In addition, this performance was achieved at a considerably high...

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Veröffentlicht in:	IEEE photonics technology letters 2010-08, Vol.22 (15), p.1087-1089
Hauptverfasser:	Hofstetter, Daniel, Di Francesco, Joab, Kandaswamy, Prem K, Das, Aparna, Valdueza-Felip, Sirona, Monroy, Eva
Format:	Artikel
Sprache:	eng
Schlagworte:	Conferences Detectors Displacement Electromagnetic wave absorption Electron optics Fiber optics Gallium nitride Nonlinear optics Optical devices Optical fibers Performance enhancement Photodetectors Quantum dots quantum dots (QDs) Quantum wells semiconductors Superlattices Temperature
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