A Program Disturb Model and Channel Leakage Current Study for Sub-20 nm nand Flash Cells

We have developed a program-disturb model to characterize the channel potential of the program-inhibited string during NAND flash cell programming. This model includes cell-to-cell capacitances from 3-D technology computer-aided design simulation and leakage currents associated with the boosted chan...

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Veröffentlicht in:	IEEE transactions on electron devices 2011-01, Vol.58 (1), p.11-16
Hauptverfasser:	Torsi, A, Yijie Zhao, Haitao Liu, Tanzawa, T, Goda, A, Kalavade, P, Parat, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Band-to-band tunneling (BTBT) Boosting Boron Capacitance channel boosting ratio (CBR) channel coupling ratio (CCR) Channels Computer aided design Computer simulation Couplings Design. Technologies. Operation analysis. Testing Devices Electric potential Electronics Exact sciences and technology flash memory Fowler-Nordheim (FN) tunneling Integrated circuits Integrated circuits by function (including memories and processors) junction leakage (J/L) Leakage current nand cell program disturb program-disturb ratio (PDR) Programming Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Strings Tunneling
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