Resistive Random Access Memory (ReRAM) Based on Metal Oxides
In this paper, we review the recent progress in the resistive random access memory (ReRAM) technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. First, we provide a brief hist...
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| Veröffentlicht in: | Proceedings of the IEEE 2010-12, Vol.98 (12), p.2237-2251 |
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| creator | Akinaga, Hiroyuki Shima, Hisashi |
| description | In this paper, we review the recent progress in the resistive random access memory (ReRAM) technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. First, we provide a brief historical overview of the research in this field. We also provide a technological overview and the epoch-making achievements, followed by an account of the current understanding of both bipolar and unipolar ReRAM operations. Finally, we summarize the challenges facing the ReRAM technology as it moves toward the beyond-2X-nm generation of nonvolatile memories and the so-called beyond complementary metal-oxide-semiconductor (CMOS) device. |
| doi_str_mv | 10.1109/JPROC.2010.2070830 |
| format | Article |
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| subjects | CMOS Devices Electrochemical devices Electrochemical processes Electrodes Electronics Metal oxides Metal-insulator structures metal-insulator-metal devices nonvolatile memories Nonvolatile memory Random access memory Resistance resistance switching Switches |
| title | Resistive Random Access Memory (ReRAM) Based on Metal Oxides |
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