A New Dynamic Selector Based on the Bipolar RRAM for the Crossbar Array Application

Crossbar array architecture is usually used for the high-density integration of the RRAM device. However, the large sneak current in the passive crossbar array limits the increase in the integration density. In this brief, the bipolar TiN/TaO x /Pt RRAM device is proposed as the dynamic selector for...

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Veröffentlicht in:	IEEE transactions on electron devices 2012-08, Vol.59 (8), p.2277-2280
Hauptverfasser:	Huang, Yinglong, Huang, Ru, Pan, Yue, Zhang, Lijie, Cai, Yimao, Yang, Gengyu, Wang, Yangyuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Arrays Density Design. Technologies. Operation analysis. Testing Devices Dynamics Educational institutions Electric potential Electronics Exact sciences and technology Fabrication Integrated circuits Integrated circuits by function (including memories and processors) Microelectronics Nonvolatile memory Platinum Resistance resistive switching RRAM selector Selectors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Switches Tin Voltage
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