A Novel Bottom Spacer FinFET Structure for Improved Short-Channel, Power-Delay, and Thermal Performance

For the first time, we propose a novel bottom spacer fin-shaped field-effect-transistor (FinFET) structure for logic applications suitable for system-on-chip (SoC) requirements. The proposed device achieved improved short-channel, power-delay, and self-heating performance compared with standard sili...

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Veröffentlicht in:IEEE transactions on electron devices 2010-06, Vol.57 (6), p.1287-1294
Hauptverfasser: Shrivastava, Mayank, Baghini, Maryam Shojaei, Sharma, Dinesh Kumar, Rao, V Ramgopal
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Sprache:eng
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