Reduction of Low-Temperature Nonlinearities in Pseudomorphic AlGaAs/InGaAs HEMTs Due to Si-Related DX Centers
The linearity of conventional pseudomorphic AlGaAs/InGaAs/AlGaAs high-electron mobility transistors with planar doping in the AlGaAs layers is shown to degrade at low temperatures down to -40°C, as measured by the adjacent-channel power ratio under wideband code-division multiple-access modulation....
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| Veröffentlicht in: | IEEE transactions on electron devices 2010-04, Vol.57 (4), p.749-754 |
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| container_title | IEEE transactions on electron devices |
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| creator | Skromme, B.J. Sasikumar, A. Green, B.M. Hartin, O.L. Weitzel, C.E. Miller, M.G. |
| description | The linearity of conventional pseudomorphic AlGaAs/InGaAs/AlGaAs high-electron mobility transistors with planar doping in the AlGaAs layers is shown to degrade at low temperatures down to -40°C, as measured by the adjacent-channel power ratio under wideband code-division multiple-access modulation. A modified structure, in which the planar Si doping layers are placed within thin single GaAs quantum wells inside the AlGaAs barrier layers, eliminates this degradation. Deep-level transient spectroscopy and persistent photocapacitance measurements show that trapping on DX centers is effectively eliminated. The linearity improvements are therefore attributed to the elimination of this trapping. Self-consistent solutions of the Schro¿dinger and Poisson equations show that the transfer of the donor electrons into the channel is essentially the same in the modified and conventional structures. |
| doi_str_mv | 10.1109/TED.2010.2041868 |
| format | Article |
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A modified structure, in which the planar Si doping layers are placed within thin single GaAs quantum wells inside the AlGaAs barrier layers, eliminates this degradation. Deep-level transient spectroscopy and persistent photocapacitance measurements show that trapping on DX centers is effectively eliminated. The linearity improvements are therefore attributed to the elimination of this trapping. Self-consistent solutions of the Schro¿dinger and Poisson equations show that the transfer of the donor electrons into the channel is essentially the same in the modified and conventional structures.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2010.2041868</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aluminum gallium arsenides ; Applied sciences ; Charge carrier processes ; Compound structure devices ; deep levels ; Deep-level transient spectroscopy (DLTS) ; Degradation ; Doping ; DX centers ; Electronics ; Exact sciences and technology ; Gallium arsenide ; Indium gallium arsenides ; Linearity ; MODFETs ; modulation-doped field-effect transistors (MODFETs) ; PHEMTs ; quantum-well devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Temperature measurement ; Transistors ; Trapping</subject><ispartof>IEEE transactions on electron devices, 2010-04, Vol.57 (4), p.749-754</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Apr 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c386t-d6f0d4883ff4f31221c6b6cebda5700a0cf35c17573b5b68b40b6afd8317f53c3</citedby><cites>FETCH-LOGICAL-c386t-d6f0d4883ff4f31221c6b6cebda5700a0cf35c17573b5b68b40b6afd8317f53c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5427054$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,782,786,798,27931,27932,54765</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5427054$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22729670$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Skromme, B.J.</creatorcontrib><creatorcontrib>Sasikumar, A.</creatorcontrib><creatorcontrib>Green, B.M.</creatorcontrib><creatorcontrib>Hartin, O.L.</creatorcontrib><creatorcontrib>Weitzel, C.E.</creatorcontrib><creatorcontrib>Miller, M.G.</creatorcontrib><title>Reduction of Low-Temperature Nonlinearities in Pseudomorphic AlGaAs/InGaAs HEMTs Due to Si-Related DX Centers</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The linearity of conventional pseudomorphic AlGaAs/InGaAs/AlGaAs high-electron mobility transistors with planar doping in the AlGaAs layers is shown to degrade at low temperatures down to -40°C, as measured by the adjacent-channel power ratio under wideband code-division multiple-access modulation. A modified structure, in which the planar Si doping layers are placed within thin single GaAs quantum wells inside the AlGaAs barrier layers, eliminates this degradation. Deep-level transient spectroscopy and persistent photocapacitance measurements show that trapping on DX centers is effectively eliminated. The linearity improvements are therefore attributed to the elimination of this trapping. Self-consistent solutions of the Schro¿dinger and Poisson equations show that the transfer of the donor electrons into the channel is essentially the same in the modified and conventional structures.</description><subject>Aluminum gallium arsenides</subject><subject>Applied sciences</subject><subject>Charge carrier processes</subject><subject>Compound structure devices</subject><subject>deep levels</subject><subject>Deep-level transient spectroscopy (DLTS)</subject><subject>Degradation</subject><subject>Doping</subject><subject>DX centers</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Indium gallium arsenides</subject><subject>Linearity</subject><subject>MODFETs</subject><subject>modulation-doped field-effect transistors (MODFETs)</subject><subject>PHEMTs</subject><subject>quantum-well devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Temperature measurement</subject><subject>Transistors</subject><subject>Trapping</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc1rGzEUxEVpoa7be6EXQSntZRN9rD72aGw3CThJSV3obdFqn6jCruRKu5T895WxyaGHnobh_WbgMQi9p-SCUtJc7rebC0aKY6SmWuoXaEGFUFUja_kSLQihumq45q_Rm5wfi5V1zRZofIB-tpOPAUeHd_FPtYfxAMlMcwJ8F8PgA5jkJw8Z-4C_ZZj7OMZ0-OUtXg1XZpUvb8JR8PX2dp_xZgY8RfzdVw8wmAl6vPmJ1xAmSPkteuXMkOHdWZfox9ftfn1d7e6vbtarXWW5llPVS0f6WmvuXO04ZYxa2UkLXW-EIsQQ67iwVAnFO9FJ3dWkk8b1mlPlBLd8iT6feg8p_p4hT-3os4VhMAHinNuGSU4pV6yQX_5LUk6F1IqUwBJ9_Ad9jHMK5Y-WEqao4FwfC8mJsinmnMC1h-RHk54K1B6XastS7XGp9rxUiXw6F5tszeCSCdbn5xxjijVSkcJ9OHEeAJ7PomaKiJr_BX4Emi4</recordid><startdate>20100401</startdate><enddate>20100401</enddate><creator>Skromme, B.J.</creator><creator>Sasikumar, A.</creator><creator>Green, B.M.</creator><creator>Hartin, O.L.</creator><creator>Weitzel, C.E.</creator><creator>Miller, M.G.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Solid state devices</topic><topic>Temperature measurement</topic><topic>Transistors</topic><topic>Trapping</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Skromme, B.J.</creatorcontrib><creatorcontrib>Sasikumar, A.</creatorcontrib><creatorcontrib>Green, B.M.</creatorcontrib><creatorcontrib>Hartin, O.L.</creatorcontrib><creatorcontrib>Weitzel, C.E.</creatorcontrib><creatorcontrib>Miller, M.G.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Skromme, B.J.</au><au>Sasikumar, A.</au><au>Green, B.M.</au><au>Hartin, O.L.</au><au>Weitzel, C.E.</au><au>Miller, M.G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reduction of Low-Temperature Nonlinearities in Pseudomorphic AlGaAs/InGaAs HEMTs Due to Si-Related DX Centers</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2010-04-01</date><risdate>2010</risdate><volume>57</volume><issue>4</issue><spage>749</spage><epage>754</epage><pages>749-754</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The linearity of conventional pseudomorphic AlGaAs/InGaAs/AlGaAs high-electron mobility transistors with planar doping in the AlGaAs layers is shown to degrade at low temperatures down to -40°C, as measured by the adjacent-channel power ratio under wideband code-division multiple-access modulation. A modified structure, in which the planar Si doping layers are placed within thin single GaAs quantum wells inside the AlGaAs barrier layers, eliminates this degradation. Deep-level transient spectroscopy and persistent photocapacitance measurements show that trapping on DX centers is effectively eliminated. The linearity improvements are therefore attributed to the elimination of this trapping. Self-consistent solutions of the Schro¿dinger and Poisson equations show that the transfer of the donor electrons into the channel is essentially the same in the modified and conventional structures.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2010.2041868</doi><tpages>6</tpages></addata></record> |
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| subjects | Aluminum gallium arsenides Applied sciences Charge carrier processes Compound structure devices deep levels Deep-level transient spectroscopy (DLTS) Degradation Doping DX centers Electronics Exact sciences and technology Gallium arsenide Indium gallium arsenides Linearity MODFETs modulation-doped field-effect transistors (MODFETs) PHEMTs quantum-well devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature measurement Transistors Trapping |
| title | Reduction of Low-Temperature Nonlinearities in Pseudomorphic AlGaAs/InGaAs HEMTs Due to Si-Related DX Centers |
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