New pulsed measurement setup for GaN and GaAs FETs characterization

A new setup is proposed for the measurement of current–voltage pulsed characteristics of electron devices. The main advantages of the system consist in: shorter pulse widths through generation in a 50-Ω environment, simple average current monitoring through separation of the direct and alternate cur...

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Veröffentlicht in:	International journal of microwave and wireless technologies 2012-06, Vol.4 (3), p.387-397
Hauptverfasser:	Santarelli, Alberto, Cignani, Rafael, Niessen, Daniel, Traverso, Pier Andrea, Filicori, Fabio
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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