Investigation of Hot Carrier–induced Degradation in Nanoscale Junctionless MOSFETs: A Reliability‐based Analysis

Investigation of Hot Carrier–induced Degradation in Nanoscale Junctionless MOSFETs: A Reliability‐based Analysis

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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_ebookcentralchapters_7107829_79_113</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EBC7107829_79_113</sourcerecordid><originalsourceid>FETCH-LOGICAL-p1564-56d7131418871d36149b456b392ce0719c18e8cd0d937d993e6de041445b91df3</originalsourceid><addsrcrecordid>eNpNUNtKAzEUjIii1n6Ab_mBas6ebC6-lXpppVrw8rxkk7SNLtm62Qp96ycI_mG_xEpFfBpmmBmYIeQM2Dkwll1oqTDPpMp4lulzO-d7pPtPQ7H_x5ELieqQnADmIFFImR2RbkqvjDGEXGnNj0k7ih8-tWFm2lBHWk_psG7pwDRN8M1m_RWiW1rv6JWfNcbtTCHSBxPrZE3l6d0y2h-18inR-8nTzfVzuqR9-uirYMpQhXa1WX-WJm1L-tFUqxTSKTmYmir57i92yMs2Nhj2xpPb0aA_7i0gF7yXCycBgYNSEhwK4LrkuShRZ9YzCdqC8so65jRKpzV64TzjwHleanBT7BDc9S6a-n25nVn4sq7frI9tYyo7N4vWN6mQwLbn6ULqAgDxG81vad8</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>book_chapter</recordtype><pqid>EBC7107829_79_113</pqid></control><display><type>book_chapter</type><title>Investigation of Hot Carrier–induced Degradation in Nanoscale Junctionless MOSFETs: A Reliability‐based Analysis</title><source>Ebook Central - Academic Complete</source><source>Ebook Central Perpetual and DDA</source><contributor>Balakrishnan, Raneesh ; Lazovic, Sasa ; P. M., Visakh ; Semkin, Artem</contributor><creatorcontrib>Balakrishnan, Raneesh ; Lazovic, Sasa ; P. M., Visakh ; Semkin, Artem</creatorcontrib><identifier>ISBN: 9783527346738</identifier><identifier>ISBN: 3527346732</identifier><identifier>EISBN: 9783527824236</identifier><identifier>EISBN: 3527824235</identifier><identifier>DOI: 10.1002/9783527824229.ch4</identifier><identifier>OCLC: 1351736772</identifier><identifier>LCCallNum: TK7874.84 .N366 2022</identifier><language>eng</language><publisher>Germany: John Wiley &amp; Sons, Incorporated</publisher><ispartof>Nanotechnology in Electronics, 2022</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://ebookcentral.proquest.com/covers/7107829-l.jpg</thumbnail><link.rule.ids>779,780,784,793,27924</link.rule.ids></links><search><contributor>Balakrishnan, Raneesh</contributor><contributor>Lazovic, Sasa</contributor><contributor>P. M., Visakh</contributor><contributor>Semkin, Artem</contributor><title>Investigation of Hot Carrier–induced Degradation in Nanoscale Junctionless MOSFETs: A Reliability‐based Analysis</title><title>Nanotechnology in Electronics</title><isbn>9783527346738</isbn><isbn>3527346732</isbn><isbn>9783527824236</isbn><isbn>3527824235</isbn><fulltext>true</fulltext><rsrctype>book_chapter</rsrctype><creationdate>2022</creationdate><recordtype>book_chapter</recordtype><recordid>eNpNUNtKAzEUjIii1n6Ab_mBas6ebC6-lXpppVrw8rxkk7SNLtm62Qp96ycI_mG_xEpFfBpmmBmYIeQM2Dkwll1oqTDPpMp4lulzO-d7pPtPQ7H_x5ELieqQnADmIFFImR2RbkqvjDGEXGnNj0k7ih8-tWFm2lBHWk_psG7pwDRN8M1m_RWiW1rv6JWfNcbtTCHSBxPrZE3l6d0y2h-18inR-8nTzfVzuqR9-uirYMpQhXa1WX-WJm1L-tFUqxTSKTmYmir57i92yMs2Nhj2xpPb0aA_7i0gF7yXCycBgYNSEhwK4LrkuShRZ9YzCdqC8so65jRKpzV64TzjwHleanBT7BDc9S6a-n25nVn4sq7frI9tYyo7N4vWN6mQwLbn6ULqAgDxG81vad8</recordid><startdate>2022</startdate><enddate>2022</enddate><general>John Wiley &amp; Sons, Incorporated</general><scope>FFUUA</scope></search><sort><creationdate>2022</creationdate><title>Investigation of Hot Carrier–induced Degradation in Nanoscale Junctionless MOSFETs: A Reliability‐based Analysis</title></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p1564-56d7131418871d36149b456b392ce0719c18e8cd0d937d993e6de041445b91df3</frbrgroupid><rsrctype>book_chapters</rsrctype><prefilter>book_chapters</prefilter><language>eng</language><creationdate>2022</creationdate><toplevel>online_resources</toplevel><collection>ProQuest Ebook Central - Book Chapters - Demo use only</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Balakrishnan, Raneesh</au><au>Lazovic, Sasa</au><au>P. M., Visakh</au><au>Semkin, Artem</au><format>book</format><genre>bookitem</genre><ristype>CHAP</ristype><atitle>Investigation of Hot Carrier–induced Degradation in Nanoscale Junctionless MOSFETs: A Reliability‐based Analysis</atitle><btitle>Nanotechnology in Electronics</btitle><date>2022</date><risdate>2022</risdate><isbn>9783527346738</isbn><isbn>3527346732</isbn><eisbn>9783527824236</eisbn><eisbn>3527824235</eisbn><cop>Germany</cop><pub>John Wiley &amp; Sons, Incorporated</pub><doi>10.1002/9783527824229.ch4</doi><oclcid>1351736772</oclcid></addata></record>
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title Investigation of Hot Carrier–induced Degradation in Nanoscale Junctionless MOSFETs: A Reliability‐based Analysis
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T22%3A22%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=bookitem&rft.atitle=Investigation%20of%20Hot%20Carrier%E2%80%93induced%20Degradation%20in%20Nanoscale%20Junctionless%20MOSFETs:%20A%20Reliability%E2%80%90based%20Analysis&rft.btitle=Nanotechnology%20in%20Electronics&rft.au=Balakrishnan,%20Raneesh&rft.date=2022&rft.isbn=9783527346738&rft.isbn_list=3527346732&rft_id=info:doi/10.1002/9783527824229.ch4&rft_dat=%3Cproquest%3EEBC7107829_79_113%3C/proquest%3E%3Curl%3E%3C/url%3E&rft.eisbn=9783527824236&rft.eisbn_list=3527824235&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=EBC7107829_79_113&rft_id=info:pmid/&rfr_iscdi=true