New Insights on the Burstein-Moss Shift and Band Gap Narrowing in Indium-Doped Zinc Oxide Thin Films

The Burstein-Moss shift and band gap narrowing of sputtered indium-doped zinc oxide (IZO) thin films are investigated as a function of carrier concentrations. The optical band gap shifts below the carrier concentration of 5.61 × 1019 cm-3 are well-described by the Burstein-Moss model. For carrier co...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	PloS one 2015-10, Vol.10 (10), p.e0141180-e0141180
Hauptverfasser:	Saw, K G, Aznan, N M, Yam, F K, Ng, S S, Pung, S Y
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Band gap Bursting Carrier density Crystal defects Crystallization Distance learning Electric properties Electrical resistivity Grain boundaries Impurities Indium Indium - chemistry Lattice parameters Mosses Particle Size Photovoltaic cells Physics Plasma Scattering Semiconductors Semiconductors (Materials) Spectrum analysis Spectrum Analysis, Raman Studies Temperature Thin films Zinc Zinc oxide Zinc Oxide - chemistry Zinc oxides
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!