MBE growth of different hexagonal GaN crystal structures or vicinal (100) GaAs substrates

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Veröffentlicht in:	Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2001, Vol.82 (1-3), p.16-18
Hauptverfasser:	GEORGAKILAS, A, CZIGANY, Zs, AMIMER, K, DAVYDOV, V. Yu, TOTH, L, PECZ, B
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Sprache:	rus
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issn	0921-5107 1873-4944
language	rus
recordid	cdi_pascalfrancis_primary_999074
source	ScienceDirect Journals (5 years ago - present)
title	MBE growth of different hexagonal GaN crystal structures or vicinal (100) GaAs substrates
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