Luminescence of Ga-Doped α-Al2O3 Crystals
The introduction of Ga3+ ions into α‐Al2O3 crystals results in a new complex luminescence band at about 5 eV. The main optical excitation maximum is observed at 8.5 eV indicating the bound exciton nature of the excited state. In the cathodoluminescence spectra at 80 K three sub‐bands can be detected...
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Veröffentlicht in: | Physica status solidi. B. Basic research 1983-12, Vol.120 (2), p.511-518 |
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creator | Jansons, J. L. Kulis, P. A. Rachko, Z. A. Springis, M. J. Tale, I. A. Valbis, J. A. |
description | The introduction of Ga3+ ions into α‐Al2O3 crystals results in a new complex luminescence band at about 5 eV. The main optical excitation maximum is observed at 8.5 eV indicating the bound exciton nature of the excited state. In the cathodoluminescence spectra at 80 K three sub‐bands can be detected with maxima at 4.61, 5.15, and 5.58 eV. The luminescence decay in all the three bands has two exponential components — a short one with τ = (15 ± 1) ns and a long one with τ about 1 ms. The Ga‐related luminescence can be observed under the excitation of X‐rays up to 600 K; a drop in intensity takes place at about 210 K corresponding to the Ga‐related TSL peak. The activation energy of the release of electrons at this peak as determined by the fractional‐glow method is (0.70 ± 0.02) eV and the frequency factor 1014 s−1.
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doi_str_mv | 10.1002/pssb.2221200207 |
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source | Wiley-Blackwell Journals |
subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other luminescence and radiative recombination Physics |
title | Luminescence of Ga-Doped α-Al2O3 Crystals |
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