Design and fabrication of a GaAs vertical MESFET

Vertically oriented GaAs MESFET's were fabricated on thick epitaxial conductive layers grown by molecular-beam epitaxy on a semi-insulating substrate. The vertical channel pattern was defined by electron-beam lithography and included structures as small as 0.3- 0.4 µm on a total period of 1.0 µ...

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Veröffentlicht in:	IEEE transactions on electron devices 1985-01, Vol.32 (5), p.952-956
Hauptverfasser:	Frensley, W.R., Bayraktaroglu, B., Campbell, S.E., Hung-Dah Shih, Lehmann, R.E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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