Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon
Building on nearly two decades of reported results for MOSFET's fabricated in small-grain polycrystalline silicon, a design methodology is developed that yields devices which have low threshold voltage, high drive current, low leakage current, tight parameteric control, and reduced topology, wh...
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| Veröffentlicht in: | IEEE transactions on electron devices 1985-02, Vol.32 (2), p.258-281 |
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| container_end_page | 281 |
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| container_issue | 2 |
| container_start_page | 258 |
| container_title | IEEE transactions on electron devices |
| container_volume | 32 |
| creator | Malhi, S.D.S. Shichijo, H. Banerjee, S.K. Sundaresan, R. Elahy, M. Pollack, G.P. Richardson, W.F. Shah, A.H. Hite, L.R. Womack, R.H. Chatterjee, P.K. Lam, H.W. |
| description | Building on nearly two decades of reported results for MOSFET's fabricated in small-grain polycrystalline silicon, a design methodology is developed that yields devices which have low threshold voltage, high drive current, low leakage current, tight parameteric control, and reduced topology, while requiring no nonstandard materials, processes, and tools. Design criteria and device performance are discussed, grain boundary characterization techniques are described, technological issues pertinent to VLSI implementation are investigated, and long-term device reliability is studied. The potential applications of the polysilicon MOSFET's in high-density dRAM and sRAM are explored. The successful implementation of an experimental stacked CMOS 64K static RAM proves the utility of these devices for three-dimensional integration in a VLSI environment. |
| doi_str_mv | 10.1109/T-ED.1985.21939 |
| format | Article |
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Design criteria and device performance are discussed, grain boundary characterization techniques are described, technological issues pertinent to VLSI implementation are investigated, and long-term device reliability is studied. The potential applications of the polysilicon MOSFET's in high-density dRAM and sRAM are explored. The successful implementation of an experimental stacked CMOS 64K static RAM proves the utility of these devices for three-dimensional integration in a VLSI environment.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/T-ED.1985.21939</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Design criteria and device performance are discussed, grain boundary characterization techniques are described, technological issues pertinent to VLSI implementation are investigated, and long-term device reliability is studied. The potential applications of the polysilicon MOSFET's in high-density dRAM and sRAM are explored. The successful implementation of an experimental stacked CMOS 64K static RAM proves the utility of these devices for three-dimensional integration in a VLSI environment.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Malhi, S.D.S.</creatorcontrib><creatorcontrib>Shichijo, H.</creatorcontrib><creatorcontrib>Banerjee, S.K.</creatorcontrib><creatorcontrib>Sundaresan, R.</creatorcontrib><creatorcontrib>Elahy, M.</creatorcontrib><creatorcontrib>Pollack, G.P.</creatorcontrib><creatorcontrib>Richardson, W.F.</creatorcontrib><creatorcontrib>Shah, A.H.</creatorcontrib><creatorcontrib>Hite, L.R.</creatorcontrib><creatorcontrib>Womack, R.H.</creatorcontrib><creatorcontrib>Chatterjee, P.K.</creatorcontrib><creatorcontrib>Lam, H.W.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Malhi, S.D.S.</au><au>Shichijo, H.</au><au>Banerjee, S.K.</au><au>Sundaresan, R.</au><au>Elahy, M.</au><au>Pollack, G.P.</au><au>Richardson, W.F.</au><au>Shah, A.H.</au><au>Hite, L.R.</au><au>Womack, R.H.</au><au>Chatterjee, P.K.</au><au>Lam, H.W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1985-02-01</date><risdate>1985</risdate><volume>32</volume><issue>2</issue><spage>258</spage><epage>281</epage><pages>258-281</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Building on nearly two decades of reported results for MOSFET's fabricated in small-grain polycrystalline silicon, a design methodology is developed that yields devices which have low threshold voltage, high drive current, low leakage current, tight parameteric control, and reduced topology, while requiring no nonstandard materials, processes, and tools. Design criteria and device performance are discussed, grain boundary characterization techniques are described, technological issues pertinent to VLSI implementation are investigated, and long-term device reliability is studied. The potential applications of the polysilicon MOSFET's in high-density dRAM and sRAM are explored. The successful implementation of an experimental stacked CMOS 64K static RAM proves the utility of these devices for three-dimensional integration in a VLSI environment.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/T-ED.1985.21939</doi><tpages>24</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1985-02, Vol.32 (2), p.258-281 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_9067073 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon |
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