Atomic Layer Deposition of SiO2 Films on BN Particles Using Sequential Surface Reactions

Alternating SiCl4 and H2O exposures were used to deposit SiO2 films with atomic layer control on BN particles. The high surface area of the BN particles facilitated the use of transmission Fourier transform infrared (FTIR) spectroscopy to monitor the sequential surface reactions. The BN particles in...

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Veröffentlicht in:	Chemistry of materials 2000-11, Vol.12 (11), p.3472-3480
Hauptverfasser:	Ferguson, J. D, Weimer, A. W, George, S. M
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
Online-Zugang:	Volltext
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