Amorphous silicon produced by ion implantation. Etching rate in HF solution and effect of annealing
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| Veröffentlicht in: | Journal of the Electrochemical Society 1984, Vol.131 (3), p.672-674 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
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| container_end_page | 674 |
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| container_issue | 3 |
| container_start_page | 672 |
| container_title | Journal of the Electrochemical Society |
| container_volume | 131 |
| creator | LIOU, L SPITZER, W. G PRUSSIN, S |
| description | |
| doi_str_mv | 10.1149/1.2115671 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0013-4651 |
| ispartof | Journal of the Electrochemical Society, 1984, Vol.131 (3), p.672-674 |
| issn | 0013-4651 1945-7111 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_8920642 |
| source | IOP Publishing Journals |
| subjects | Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors Exact sciences and technology Physics Structure of solids and liquids crystallography |
| title | Amorphous silicon produced by ion implantation. Etching rate in HF solution and effect of annealing |
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