DLTS study of the influence of plastic deformation on deep levels in n-type CdTe

Using transient capacitance spectroscopy, deep-level defects which are introduced by plastic deformation in n-type CdTe have been looked for. Within the range 0·1-0·75 eV below the conduction-band edge, one line at E e -0·72 eV associated with deformation-induced defects has been found. The characte...

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Veröffentlicht in:	Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties Physics of condensed matter. Defects and mechanical properties, 1984-11, Vol.49 (5), p.L35-L41
Hauptverfasser:	Gelsdorf, F., Schröter, W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Impurity and defect levels Physics
Online-Zugang:	Volltext
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