Proposal of an optical modulator based on resonant tunneling and intersubband transitions
We propose and analyze an optical modulator based on intersubband transitions. The absorption is modulated by modulating the carrier density in the ground state of a quantum well (QW). Electrons are injected resonantly into this subband from a QW reservoir subband through a single barrier. When the...
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| Veröffentlicht in: | IEEE journal of quantum electronics 2001-02, Vol.37 (2), p.224-230 |
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| creator | Holmstrom, P. Thylen, L. Ukenberg, U. |
| description | We propose and analyze an optical modulator based on intersubband transitions. The absorption is modulated by modulating the carrier density in the ground state of a quantum well (QW). Electrons are injected resonantly into this subband from a QW reservoir subband through a single barrier. When the two states are tuned out of resonance, the electrons are rapidly evacuated by means of the optical field. A waveguide based on surface plasmons is assumed in order to have a high optical mode overlap. Calculations are performed for a cascaded structure with four periods, assuming InGaAs-InIAs QWs. The considered modulator structure operates at /spl lambda/=6.0 /spl mu/m and is RC limited to 27 GHz. An extinction ratio of 4 is obtained with a low applied voltage of 0.6 V. At larger applied voltages, the absorption is bistable. Absorption at shorter/longer wavelengths can be obtained by using materials with a larger/smaller conduction band offset. We also assess resonant tunneling from a 2-D electron gas reservoir into an array of quantum dots and compare it to the 2-D-2-D tunneling resonance. |
| doi_str_mv | 10.1109/3.903072 |
| format | Article |
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The absorption is modulated by modulating the carrier density in the ground state of a quantum well (QW). Electrons are injected resonantly into this subband from a QW reservoir subband through a single barrier. When the two states are tuned out of resonance, the electrons are rapidly evacuated by means of the optical field. A waveguide based on surface plasmons is assumed in order to have a high optical mode overlap. Calculations are performed for a cascaded structure with four periods, assuming InGaAs-InIAs QWs. The considered modulator structure operates at /spl lambda/=6.0 /spl mu/m and is RC limited to 27 GHz. An extinction ratio of 4 is obtained with a low applied voltage of 0.6 V. At larger applied voltages, the absorption is bistable. Absorption at shorter/longer wavelengths can be obtained by using materials with a larger/smaller conduction band offset. We also assess resonant tunneling from a 2-D electron gas reservoir into an array of quantum dots and compare it to the 2-D-2-D tunneling resonance.</description><identifier>ISSN: 0018-9197</identifier><identifier>ISSN: 1558-1713</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/3.903072</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Absorption ; Arrays ; Carrier density ; Charge carrier density ; devices ; Electric potential ; Electron optics ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; infrared modulator ; Intersubband transitions ; light modulators ; mid-IR ; Modulators ; nonparabolicity ; Optical bistability ; Optical elements, devices, and systems ; Optical modulation ; Optical processors, correlators, and modulators ; Optical waveguides ; Optics ; Physics ; Proposals ; Quantum dots ; quantum wells ; Reservoirs ; Resonance ; Resonant tunneling ; Resonant tunneling devices ; shift ; spectroscopy ; stark ; Voltage</subject><ispartof>IEEE journal of quantum electronics, 2001-02, Vol.37 (2), p.224-230</ispartof><rights>2001 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2001</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c430t-d478f0bd15326500b8dc0ee6af179145420f347d62e79aac740ea41d99f124073</citedby><cites>FETCH-LOGICAL-c430t-d478f0bd15326500b8dc0ee6af179145420f347d62e79aac740ea41d99f124073</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/903072$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,776,780,792,881,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/903072$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=882688$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-20386$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Holmstrom, P.</creatorcontrib><creatorcontrib>Thylen, L.</creatorcontrib><creatorcontrib>Ukenberg, U.</creatorcontrib><title>Proposal of an optical modulator based on resonant tunneling and intersubband transitions</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>We propose and analyze an optical modulator based on intersubband transitions. The absorption is modulated by modulating the carrier density in the ground state of a quantum well (QW). Electrons are injected resonantly into this subband from a QW reservoir subband through a single barrier. When the two states are tuned out of resonance, the electrons are rapidly evacuated by means of the optical field. A waveguide based on surface plasmons is assumed in order to have a high optical mode overlap. Calculations are performed for a cascaded structure with four periods, assuming InGaAs-InIAs QWs. The considered modulator structure operates at /spl lambda/=6.0 /spl mu/m and is RC limited to 27 GHz. An extinction ratio of 4 is obtained with a low applied voltage of 0.6 V. At larger applied voltages, the absorption is bistable. Absorption at shorter/longer wavelengths can be obtained by using materials with a larger/smaller conduction band offset. We also assess resonant tunneling from a 2-D electron gas reservoir into an array of quantum dots and compare it to the 2-D-2-D tunneling resonance.</description><subject>Absorption</subject><subject>Arrays</subject><subject>Carrier density</subject><subject>Charge carrier density</subject><subject>devices</subject><subject>Electric potential</subject><subject>Electron optics</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>infrared modulator</subject><subject>Intersubband transitions</subject><subject>light modulators</subject><subject>mid-IR</subject><subject>Modulators</subject><subject>nonparabolicity</subject><subject>Optical bistability</subject><subject>Optical elements, devices, and systems</subject><subject>Optical modulation</subject><subject>Optical processors, correlators, and modulators</subject><subject>Optical waveguides</subject><subject>Optics</subject><subject>Physics</subject><subject>Proposals</subject><subject>Quantum dots</subject><subject>quantum wells</subject><subject>Reservoirs</subject><subject>Resonance</subject><subject>Resonant tunneling</subject><subject>Resonant tunneling devices</subject><subject>shift</subject><subject>spectroscopy</subject><subject>stark</subject><subject>Voltage</subject><issn>0018-9197</issn><issn>1558-1713</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0c2L1TAQAPAgCj5XwbOnoqAe7Dr5apLjsn7Cgh5U8BTSdrpm7Uu6SYr435tHH-_gQTyFIb_MTGYIeUzhnFIwr_m5AQ6K3SE7KqVuqaL8LtkBUN0aatR98iDnmxoKoWFHvn9OcYnZzU2cGheauBQ_1Ggfx3V2JaamdxnHJoYmYY7BhdKUNQScfbiuD8bGh4Ipr31_CEpyIfviY8gPyb3JzRkfHc8z8vXd2y-XH9qrT-8_Xl5ctYPgUNpRKD1BP1LJWScBej0OgNi5iSpDhRQMJi7U2DFUxrlBCUAn6GjMRJkAxc_Iqy1v_oXL2tsl-b1Lv2103r7x3y5sTNf2Z_lhGXDdVf5i40uKtyvmYvc-DzjPLmBcs601OwFc8Sqf_1MyLYEJ-R-w09pIdmj16V_wJq4p1OlYrYXqRCdZRS83NKSYc8Lp9CMK9rBiy-224kqfHfO5XJc21eEPPp-81ofKVT3ZlEfE0-UxxR-3gKyN</recordid><startdate>20010201</startdate><enddate>20010201</enddate><creator>Holmstrom, P.</creator><creator>Thylen, L.</creator><creator>Ukenberg, U.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>H8D</scope><scope>F28</scope><scope>FR3</scope><scope>ADTPV</scope><scope>AOWAS</scope><scope>D8V</scope></search><sort><creationdate>20010201</creationdate><title>Proposal of an optical modulator based on resonant tunneling and intersubband transitions</title><author>Holmstrom, P. ; Thylen, L. ; Ukenberg, U.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c430t-d478f0bd15326500b8dc0ee6af179145420f347d62e79aac740ea41d99f124073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Absorption</topic><topic>Arrays</topic><topic>Carrier density</topic><topic>Charge carrier density</topic><topic>devices</topic><topic>Electric potential</topic><topic>Electron optics</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>infrared modulator</topic><topic>Intersubband transitions</topic><topic>light modulators</topic><topic>mid-IR</topic><topic>Modulators</topic><topic>nonparabolicity</topic><topic>Optical bistability</topic><topic>Optical elements, devices, and systems</topic><topic>Optical modulation</topic><topic>Optical processors, correlators, and modulators</topic><topic>Optical waveguides</topic><topic>Optics</topic><topic>Physics</topic><topic>Proposals</topic><topic>Quantum dots</topic><topic>quantum wells</topic><topic>Reservoirs</topic><topic>Resonance</topic><topic>Resonant tunneling</topic><topic>Resonant tunneling devices</topic><topic>shift</topic><topic>spectroscopy</topic><topic>stark</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Holmstrom, P.</creatorcontrib><creatorcontrib>Thylen, L.</creatorcontrib><creatorcontrib>Ukenberg, U.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aerospace Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SwePub</collection><collection>SwePub Articles</collection><collection>SWEPUB Kungliga Tekniska Högskolan</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Holmstrom, P.</au><au>Thylen, L.</au><au>Ukenberg, U.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Proposal of an optical modulator based on resonant tunneling and intersubband transitions</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>2001-02-01</date><risdate>2001</risdate><volume>37</volume><issue>2</issue><spage>224</spage><epage>230</epage><pages>224-230</pages><issn>0018-9197</issn><issn>1558-1713</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>We propose and analyze an optical modulator based on intersubband transitions. The absorption is modulated by modulating the carrier density in the ground state of a quantum well (QW). Electrons are injected resonantly into this subband from a QW reservoir subband through a single barrier. When the two states are tuned out of resonance, the electrons are rapidly evacuated by means of the optical field. A waveguide based on surface plasmons is assumed in order to have a high optical mode overlap. Calculations are performed for a cascaded structure with four periods, assuming InGaAs-InIAs QWs. The considered modulator structure operates at /spl lambda/=6.0 /spl mu/m and is RC limited to 27 GHz. An extinction ratio of 4 is obtained with a low applied voltage of 0.6 V. At larger applied voltages, the absorption is bistable. Absorption at shorter/longer wavelengths can be obtained by using materials with a larger/smaller conduction band offset. We also assess resonant tunneling from a 2-D electron gas reservoir into an array of quantum dots and compare it to the 2-D-2-D tunneling resonance.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/3.903072</doi><tpages>7</tpages></addata></record> |
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| subjects | Absorption Arrays Carrier density Charge carrier density devices Electric potential Electron optics Exact sciences and technology Fundamental areas of phenomenology (including applications) infrared modulator Intersubband transitions light modulators mid-IR Modulators nonparabolicity Optical bistability Optical elements, devices, and systems Optical modulation Optical processors, correlators, and modulators Optical waveguides Optics Physics Proposals Quantum dots quantum wells Reservoirs Resonance Resonant tunneling Resonant tunneling devices shift spectroscopy stark Voltage |
| title | Proposal of an optical modulator based on resonant tunneling and intersubband transitions |
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