A 1.3 μm InGaAsP/InP multiquantum well laser grown by LPE

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Veröffentlicht in:	Japanese journal of applied physics 1985, Vol.24 (2), p.L137-L139
Hauptverfasser:	SASAI, Y, HASE, N, KAJIWARA, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes
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source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes
title	A 1.3 μm InGaAsP/InP multiquantum well laser grown by LPE
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