Transient simulation of silicon devices and circuits

In this paper, we present an overview of the physical principles and numerical methods used to solve the coupled system of non-linear partial differential equations that model the transient behavior of silicon VLSI device structures. We also describe how the same techniques are applicable to circuit...

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Veröffentlicht in:	IEEE transactions on electron devices 1985-10, Vol.32 (10), p.1992-2007
Hauptverfasser:	Bank, R.E., Coughran, W.M., Fichtner, W., Grosse, E.H., Rose, D.J., Smith, R.K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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