Transient simulation of silicon devices and circuits

Transient simulation of silicon devices and circuits

In this paper, we present an overview of the physical principles and numerical methods used to solve the coupled system of non-linear partial differential equations that model the transient behavior of silicon VLSI device structures. We also describe how the same techniques are applicable to circuit...

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Veröffentlicht in:IEEE transactions on electron devices 1985-10, Vol.32 (10), p.1992-2007
Hauptverfasser: Bank, R.E., Coughran, W.M., Fichtner, W., Grosse, E.H., Rose, D.J., Smith, R.K.
Format: Artikel
Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 2007
container_issue 10
container_start_page 1992
container_title IEEE transactions on electron devices
container_volume 32
creator Bank, R.E.
Coughran, W.M.
Fichtner, W.
Grosse, E.H.
Rose, D.J.
Smith, R.K.
description In this paper, we present an overview of the physical principles and numerical methods used to solve the coupled system of non-linear partial differential equations that model the transient behavior of silicon VLSI device structures. We also describe how the same techniques are applicable to circuit simulation. A composite linear multistep formula is introduced as the time-integration scheme. Newton-iterative methods are exploited to solve the nonlinear equations that arise at each time step. We also present a simple data structure for nonsymmetric matrices with symmetric nonzero structures that facilitates iterative or direct methods with substantial efficiency gains over other storage schemes. Several computational examples, including a CMOS latchup problem, are presented and discussed.
doi_str_mv 10.1109/T-ED.1985.22232
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subjects Applied sciences
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Transient simulation of silicon devices and circuits
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