Photolytic etching of polycrystalline silicon in SF6 atmosphere

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Veröffentlicht in:Japanese journal of applied physics 1986-11, Vol.25 (11), p.L881-L884
Hauptverfasser: WATANABE, S, UEDA, S, NAKAZATO, N, TAIKAI, M
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container_end_page L884
container_issue 11
container_start_page L881
container_title Japanese journal of applied physics
container_volume 25
creator WATANABE, S
UEDA, S
NAKAZATO, N
TAIKAI, M
description
doi_str_mv 10.1143/jjap.25.l881
format Article
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ispartof Japanese journal of applied physics, 1986-11, Vol.25 (11), p.L881-L884
issn 0021-4922
1347-4065
language eng
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid-fluid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
title Photolytic etching of polycrystalline silicon in SF6 atmosphere
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