Photolytic etching of polycrystalline silicon in SF6 atmosphere
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Veröffentlicht in: | Japanese journal of applied physics 1986-11, Vol.25 (11), p.L881-L884 |
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container_end_page | L884 |
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container_issue | 11 |
container_start_page | L881 |
container_title | Japanese journal of applied physics |
container_volume | 25 |
creator | WATANABE, S UEDA, S NAKAZATO, N TAIKAI, M |
description | |
doi_str_mv | 10.1143/jjap.25.l881 |
format | Article |
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fulltext | fulltext |
identifier | ISSN: 0021-4922 |
ispartof | Japanese journal of applied physics, 1986-11, Vol.25 (11), p.L881-L884 |
issn | 0021-4922 1347-4065 |
language | eng |
recordid | cdi_pascalfrancis_primary_8366459 |
source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid-fluid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
title | Photolytic etching of polycrystalline silicon in SF6 atmosphere |
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