Avalanche Spectroscopy of MIS Structure Generation Centres
A method is presented for studying the generation phenomena in strong fields (105 to 106 V/cm) under avalanche conditions. This allows one to determine the value of the initiating generation current (IGC) in the avalanche process, and to analyze its behaviour with respect to supplied voltage. Irregu...
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| Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1986-01, Vol.93 (1), p.369-376 |
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| container_end_page | 376 |
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| container_start_page | 369 |
| container_title | Physica status solidi. A, Applied research |
| container_volume | 93 |
| creator | Kravchenko, A. B. Plotnikov, A. F. Solonko, A. G. Shubin, V. E. |
| description | A method is presented for studying the generation phenomena in strong fields (105 to 106 V/cm) under avalanche conditions. This allows one to determine the value of the initiating generation current (IGC) in the avalanche process, and to analyze its behaviour with respect to supplied voltage. Irregularities of the dark generation current arising with the injection of hot carriers into an insulator are shown to be due to the charge exchange between slow surface states and a space charge layer. A model of the generation center and its discharge behaviour is devised. According to this model the generation center depth and the energy position are found. Energy level of the generation center coincides with the peak of fast DOS extracted from quasi‐static C‐U measurements with an accuracy up to 0.1 eV.
[Russian Text Ignored]. |
| doi_str_mv | 10.1002/pssa.2210930146 |
| format | Article |
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| subjects | Applied sciences Electronics Exact sciences and technology Interfaces Other techniques and industries Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Avalanche Spectroscopy of MIS Structure Generation Centres |
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