Phenomena in silicon photodiodes doped with Zn and
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| Veröffentlicht in: | Infrared physics 1986, Vol.26 (5), p.267-272 |
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| container_title | Infrared physics |
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| creator | HARUTYUNYAN, V. M ADAMYAN, Z. N BARSEGHYAN, R. J GASPARYAN, F. V AZARYAN, M. H SEMERDJIAN, B. O MKHITARYAN, Z. H MELKONYAN, S. V |
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| fulltext | fulltext |
| identifier | ISSN: 0020-0891 |
| ispartof | Infrared physics, 1986, Vol.26 (5), p.267-272 |
| issn | 0020-0891 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_7915931 |
| source | Alma/SFX Local Collection |
| subjects | Bolometer infrared, submillimeter wave, microwave and radiowave receivers and detectors Exact sciences and technology Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Physics |
| title | Phenomena in silicon photodiodes doped with Zn and |
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