Velocity fluctuation noise measurements on AlGaAs-GaAs interfaces
In this paper, the experiments undertaken to determine the dc, ac, and noise properties in the hot-electron regime of AlGaAs-GaAs heterojunction interfaces are discussed. With the use of noise temperature data, the diffusion coefficient can be determined as a function of electric field for transport...
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| Veröffentlicht in: | IEEE transactions on electron devices 1987-12, Vol.34 (12), p.2530-2534 |
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| container_end_page | 2534 |
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| container_issue | 12 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 34 |
| creator | Whiteside, C.F. Bosman, G. Morkoc, H. |
| description | In this paper, the experiments undertaken to determine the dc, ac, and noise properties in the hot-electron regime of AlGaAs-GaAs heterojunction interfaces are discussed. With the use of noise temperature data, the diffusion coefficient can be determined as a function of electric field for transport parallel to the AlGaAs-GaAs interface. Two device structures with different characteristics, such as length, fraction of aluminum content, sheet-carrier concentration, etc., are used in the experiments. The experimental results are attributed to the field-dependent charge-transport properties of the quasi-two-dimensional electron gas formed at the interface. |
| doi_str_mv | 10.1109/T-ED.1987.23344 |
| format | Article |
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With the use of noise temperature data, the diffusion coefficient can be determined as a function of electric field for transport parallel to the AlGaAs-GaAs interface. Two device structures with different characteristics, such as length, fraction of aluminum content, sheet-carrier concentration, etc., are used in the experiments. The experimental results are attributed to the field-dependent charge-transport properties of the quasi-two-dimensional electron gas formed at the interface.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/T-ED.1987.23344</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Current measurement ; Electric fields ; Electronics ; Exact sciences and technology ; Gallium arsenide ; HEMTs ; Heterojunctions ; Interfaces ; Noise measurement ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Temperature measurement</subject><ispartof>IEEE transactions on electron devices, 1987-12, Vol.34 (12), p.2530-2534</ispartof><rights>1988 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c387t-6f91edd853afc768a3c8338aaa55895f1c3b13c87a2919ae38049a1cc90594413</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1487055$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1487055$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7747387$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Whiteside, C.F.</creatorcontrib><creatorcontrib>Bosman, G.</creatorcontrib><creatorcontrib>Morkoc, H.</creatorcontrib><title>Velocity fluctuation noise measurements on AlGaAs-GaAs interfaces</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In this paper, the experiments undertaken to determine the dc, ac, and noise properties in the hot-electron regime of AlGaAs-GaAs heterojunction interfaces are discussed. With the use of noise temperature data, the diffusion coefficient can be determined as a function of electric field for transport parallel to the AlGaAs-GaAs interface. Two device structures with different characteristics, such as length, fraction of aluminum content, sheet-carrier concentration, etc., are used in the experiments. The experimental results are attributed to the field-dependent charge-transport properties of the quasi-two-dimensional electron gas formed at the interface.</description><subject>Applied sciences</subject><subject>Current measurement</subject><subject>Electric fields</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>HEMTs</subject><subject>Heterojunctions</subject><subject>Interfaces</subject><subject>Noise measurement</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Temperature measurement</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNpFkL1PwzAQxS0EEqUwM7BkQGxp7diO7TFqS0GqxFJYrcM9S0b5KHYy9L8npRUsd7qn33vSPULuGZ0xRs18m6-WM2a0mhWcC3FBJkxKlZtSlJdkQinTueGaX5OblL7GsxSimJDqA-vOhf6Q-Xpw_QB96Nqs7ULCrEFIQ8QG2z5lo1rVa6hSfhxZaHuMHhymW3LloU54d95T8v682i5e8s3b-nVRbXLHterz0huGu52WHLxTpQbuNOcaAKTURnrm-CcbNQWFYQaQayoMMOcMlUYIxqfk6ZS7j933gKm3TUgO6xpa7IZkC6GUpoUewfkJdLFLKaK3-xgaiAfLqD1WZbd2tbTHquxvVaPj8RwNyUHtI7QupD-bUkKNP4zYwwkLiPgfKrSiUvIfjJlxHQ</recordid><startdate>19871201</startdate><enddate>19871201</enddate><creator>Whiteside, C.F.</creator><creator>Bosman, G.</creator><creator>Morkoc, H.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19871201</creationdate><title>Velocity fluctuation noise measurements on AlGaAs-GaAs interfaces</title><author>Whiteside, C.F. ; Bosman, G. ; Morkoc, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c387t-6f91edd853afc768a3c8338aaa55895f1c3b13c87a2919ae38049a1cc90594413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1987</creationdate><topic>Applied sciences</topic><topic>Current measurement</topic><topic>Electric fields</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>HEMTs</topic><topic>Heterojunctions</topic><topic>Interfaces</topic><topic>Noise measurement</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Temperature measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Whiteside, C.F.</creatorcontrib><creatorcontrib>Bosman, G.</creatorcontrib><creatorcontrib>Morkoc, H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Whiteside, C.F.</au><au>Bosman, G.</au><au>Morkoc, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Velocity fluctuation noise measurements on AlGaAs-GaAs interfaces</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1987-12-01</date><risdate>1987</risdate><volume>34</volume><issue>12</issue><spage>2530</spage><epage>2534</epage><pages>2530-2534</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this paper, the experiments undertaken to determine the dc, ac, and noise properties in the hot-electron regime of AlGaAs-GaAs heterojunction interfaces are discussed. With the use of noise temperature data, the diffusion coefficient can be determined as a function of electric field for transport parallel to the AlGaAs-GaAs interface. Two device structures with different characteristics, such as length, fraction of aluminum content, sheet-carrier concentration, etc., are used in the experiments. The experimental results are attributed to the field-dependent charge-transport properties of the quasi-two-dimensional electron gas formed at the interface.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/T-ED.1987.23344</doi><tpages>5</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1987-12, Vol.34 (12), p.2530-2534 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Current measurement Electric fields Electronics Exact sciences and technology Gallium arsenide HEMTs Heterojunctions Interfaces Noise measurement Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature measurement |
| title | Velocity fluctuation noise measurements on AlGaAs-GaAs interfaces |
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