Investigation of the surface states in heavily doped GaAs by kelvin probe

The gallium arsenide epitaxial layer work function dependence upon the degree of donor doping is investigated. It is found that the surface aceptor centres of energy Ec – 0.68 eV and density of ≈ 1.4 × 1012 cm−2 become fully occupied by electrons with the increase of free electron concentration in t...

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Veröffentlicht in:	Physica status solidi. A, Applied research Applied research, 1987-02, Vol.99 (2), p.543-547
Hauptverfasser:	Filipavičius, V., Gaidys, R., Matulaitis, V.-A., Petrauskas, G., Sakalas, A., Sakalauskas, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states
Online-Zugang:	Volltext
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