Investigation of the surface states in heavily doped GaAs by kelvin probe
The gallium arsenide epitaxial layer work function dependence upon the degree of donor doping is investigated. It is found that the surface aceptor centres of energy Ec – 0.68 eV and density of ≈ 1.4 × 1012 cm−2 become fully occupied by electrons with the increase of free electron concentration in t...
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| Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1987-02, Vol.99 (2), p.543-547 |
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| container_end_page | 547 |
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| container_issue | 2 |
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| container_title | Physica status solidi. A, Applied research |
| container_volume | 99 |
| creator | Filipavičius, V. Gaidys, R. Matulaitis, V.-A. Petrauskas, G. Sakalas, A. Sakalauskas, S. |
| description | The gallium arsenide epitaxial layer work function dependence upon the degree of donor doping is investigated. It is found that the surface aceptor centres of energy Ec – 0.68 eV and density of ≈ 1.4 × 1012 cm−2 become fully occupied by electrons with the increase of free electron concentration in the bulk GaAs above ≈ 2 × 1017 cm−3. Consequently, the Fermi level is no longer pinned by the surface states but shifts to the bottom of the conduction band. Conventiaonal gallium arsenide surface treatment techniques is found to lead to the formation of surface centres of energy Ec – 0.56 eV and concentration above 1.2 × 1013 cm−2.
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| doi_str_mv | 10.1002/pssa.2210990225 |
| format | Article |
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| source | Wiley Online Library - AutoHoldings Journals |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states |
| title | Investigation of the surface states in heavily doped GaAs by kelvin probe |
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