Deposition and electrical properties of in situ phosphorus-doped silicon films formed by low-pressure chemical vapor deposition

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Veröffentlicht in:	Journal of applied physics 1987-03, Vol.61 (5), p.1898-1904
Hauptverfasser:	LEARN, A. J, FOSTER, D. W
Format:	Artikel
Sprache:	eng ; jpn
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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doi_str_mv	10.1063/1.338036
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ispartof	Journal of applied physics, 1987-03, Vol.61 (5), p.1898-1904
issn	0021-8979 1089-7550
language	eng ; jpn
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source	AIP Digital Archive
subjects	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
title	Deposition and electrical properties of in situ phosphorus-doped silicon films formed by low-pressure chemical vapor deposition
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