Degradations due to hole trapping in flash memory cells
Degradation in the hot-electron programmability of the flash memory cell is observed after erasing from the drain. Trapped holes in the oxide near the drain junction are found to be responsible for this degradation. Hole trapping in the oxide also causes another problem known as gate disturb, which...
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| Veröffentlicht in: | IEEE electron device letters 1989-03, Vol.10 (3), p.117-119 |
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| container_title | IEEE electron device letters |
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| creator | Haddad, S. Chang, C. Swaminathan, B. Lien, J. |
| description | Degradation in the hot-electron programmability of the flash memory cell is observed after erasing from the drain. Trapped holes in the oxide near the drain junction are found to be responsible for this degradation. Hole trapping in the oxide also causes another problem known as gate disturb, which is the undesired increase in the threshold voltage of an erased cell during programming of the other cells on the same word line. Threshold-voltage shifts due to gate disturb are used to monitor the amount of trapped holes in the oxide after cell erasure. It is determined that the trapped holes are mainly externally injected from the junction depletion region rather than directly generated in the oxide by the Fowler-Nordheim (F-N) tunneling process.< > |
| doi_str_mv | 10.1109/55.31687 |
| format | Article |
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Trapped holes in the oxide near the drain junction are found to be responsible for this degradation. Hole trapping in the oxide also causes another problem known as gate disturb, which is the undesired increase in the threshold voltage of an erased cell during programming of the other cells on the same word line. Threshold-voltage shifts due to gate disturb are used to monitor the amount of trapped holes in the oxide after cell erasure. It is determined that the trapped holes are mainly externally injected from the junction depletion region rather than directly generated in the oxide by the Fowler-Nordheim (F-N) tunneling process.< ></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.31687</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Degradation ; Electron traps ; Electronics ; EPROM ; Exact sciences and technology ; Flash memory cells ; Hot carriers ; Magnetic and optical mass memories ; Monitoring ; Nonvolatile memory ; Secondary generated hot electron injection ; Storage and reproduction of information ; Threshold voltage ; Tunneling</subject><ispartof>IEEE electron device letters, 1989-03, Vol.10 (3), p.117-119</ispartof><rights>1989 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c303t-bfda6e3532edfb29fcc5f8d8007b90da92447bd95bd0a3e0402efbb83cffcd8f3</citedby><cites>FETCH-LOGICAL-c303t-bfda6e3532edfb29fcc5f8d8007b90da92447bd95bd0a3e0402efbb83cffcd8f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/31687$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27906,27907,54740</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/31687$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7248422$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Haddad, S.</creatorcontrib><creatorcontrib>Chang, C.</creatorcontrib><creatorcontrib>Swaminathan, B.</creatorcontrib><creatorcontrib>Lien, J.</creatorcontrib><title>Degradations due to hole trapping in flash memory cells</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Degradation in the hot-electron programmability of the flash memory cell is observed after erasing from the drain. Trapped holes in the oxide near the drain junction are found to be responsible for this degradation. Hole trapping in the oxide also causes another problem known as gate disturb, which is the undesired increase in the threshold voltage of an erased cell during programming of the other cells on the same word line. Threshold-voltage shifts due to gate disturb are used to monitor the amount of trapped holes in the oxide after cell erasure. It is determined that the trapped holes are mainly externally injected from the junction depletion region rather than directly generated in the oxide by the Fowler-Nordheim (F-N) tunneling process.< ></description><subject>Applied sciences</subject><subject>Degradation</subject><subject>Electron traps</subject><subject>Electronics</subject><subject>EPROM</subject><subject>Exact sciences and technology</subject><subject>Flash memory cells</subject><subject>Hot carriers</subject><subject>Magnetic and optical mass memories</subject><subject>Monitoring</subject><subject>Nonvolatile memory</subject><subject>Secondary generated hot electron injection</subject><subject>Storage and reproduction of information</subject><subject>Threshold voltage</subject><subject>Tunneling</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNo9kEtLw0AUhQdRsFbBrbssRNyk3nklk6W0vqDgRtdhHnfaSF7OpIv-e1NTujqL8_FxOITcUlhQCsWTlAtOM5WfkRmVUqUgM35OZpALmnIK2SW5ivEHgAqRixnJV7gJ2umh6tqYuB0mQ5dsu3rMoPu-ajdJ1Sa-1nGbNNh0YZ9YrOt4TS68riPeHHNOvl9fvpbv6frz7WP5vE4tBz6kxjudIZecofOGFd5a6ZVTALkpwOmCjTOMK6RxoDmCAIbeGMWt99Ypz-fkYfL2ofvdYRzKpoqHBbrFbhdLpphQOctG8HECbehiDOjLPlSNDvuSQnl4ppSy_H9mRO-PTh2trn3Qra3iic9Ho2BsxO4mrELEUzsp_gANF2rj</recordid><startdate>19890301</startdate><enddate>19890301</enddate><creator>Haddad, S.</creator><creator>Chang, C.</creator><creator>Swaminathan, B.</creator><creator>Lien, J.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19890301</creationdate><title>Degradations due to hole trapping in flash memory cells</title><author>Haddad, S. ; Chang, C. ; Swaminathan, B. ; Lien, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c303t-bfda6e3532edfb29fcc5f8d8007b90da92447bd95bd0a3e0402efbb83cffcd8f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Applied sciences</topic><topic>Degradation</topic><topic>Electron traps</topic><topic>Electronics</topic><topic>EPROM</topic><topic>Exact sciences and technology</topic><topic>Flash memory cells</topic><topic>Hot carriers</topic><topic>Magnetic and optical mass memories</topic><topic>Monitoring</topic><topic>Nonvolatile memory</topic><topic>Secondary generated hot electron injection</topic><topic>Storage and reproduction of information</topic><topic>Threshold voltage</topic><topic>Tunneling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Haddad, S.</creatorcontrib><creatorcontrib>Chang, C.</creatorcontrib><creatorcontrib>Swaminathan, B.</creatorcontrib><creatorcontrib>Lien, J.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Haddad, S.</au><au>Chang, C.</au><au>Swaminathan, B.</au><au>Lien, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Degradations due to hole trapping in flash memory cells</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1989-03-01</date><risdate>1989</risdate><volume>10</volume><issue>3</issue><spage>117</spage><epage>119</epage><pages>117-119</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Degradation in the hot-electron programmability of the flash memory cell is observed after erasing from the drain. Trapped holes in the oxide near the drain junction are found to be responsible for this degradation. Hole trapping in the oxide also causes another problem known as gate disturb, which is the undesired increase in the threshold voltage of an erased cell during programming of the other cells on the same word line. Threshold-voltage shifts due to gate disturb are used to monitor the amount of trapped holes in the oxide after cell erasure. It is determined that the trapped holes are mainly externally injected from the junction depletion region rather than directly generated in the oxide by the Fowler-Nordheim (F-N) tunneling process.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.31687</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 1989-03, Vol.10 (3), p.117-119 |
| issn | 0741-3106 1558-0563 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Degradation Electron traps Electronics EPROM Exact sciences and technology Flash memory cells Hot carriers Magnetic and optical mass memories Monitoring Nonvolatile memory Secondary generated hot electron injection Storage and reproduction of information Threshold voltage Tunneling |
| title | Degradations due to hole trapping in flash memory cells |
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