Lithographic processing of polymers using plasma-generated electron beams
Pattern definition in polymer films is achieved using electron beams generated in soft vacuum (0.05-0.50 torr) glow discharges either on a continuous or a pulsed (20-100 ns) basis. With the continuous-mode electron beam, 7- mu m transmission mask features are replicated in both polymethyl methacryla...
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| Veröffentlicht in: | IEEE transactions on plasma science 1990-04, Vol.18 (2), p.198-209 |
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| container_end_page | 209 |
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| container_title | IEEE transactions on plasma science |
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| creator | Li, L. Krishnaswamy, J. Yu, Z. Collins, G.J. Hiraoka, H. Caolo, M.A. |
| description | Pattern definition in polymer films is achieved using electron beams generated in soft vacuum (0.05-0.50 torr) glow discharges either on a continuous or a pulsed (20-100 ns) basis. With the continuous-mode electron beam, 7- mu m transmission mask features are replicated in both polymethyl methacrylate (PMMA) and polyimide resists. Using a pulsed electron-beam submicron ( approximately 0.5 mu m) features are transferred from an electron-transmitting stencil mask into the PMMA. The soft-vacuum pulsed electron beam is also eminently suited for polymer stabilization. Pulsed electron-beam hardening of 0.05-3.5 mu -thick AZ-type and MacDermid resist patterns is also demonstrated with hardened resist patterns stable to temperatures between 200 degrees and 350 degrees C. The demonstrated replication and pattern stabilization technique may be applicable in microelectronics packaging lithography where the resist thickness is substantial, linewidths are 1-10 mu m, and registration requirements are less stringent.< > |
| doi_str_mv | 10.1109/27.131020 |
| format | Article |
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With the continuous-mode electron beam, 7- mu m transmission mask features are replicated in both polymethyl methacrylate (PMMA) and polyimide resists. Using a pulsed electron-beam submicron ( approximately 0.5 mu m) features are transferred from an electron-transmitting stencil mask into the PMMA. The soft-vacuum pulsed electron beam is also eminently suited for polymer stabilization. Pulsed electron-beam hardening of 0.05-3.5 mu -thick AZ-type and MacDermid resist patterns is also demonstrated with hardened resist patterns stable to temperatures between 200 degrees and 350 degrees C. The demonstrated replication and pattern stabilization technique may be applicable in microelectronics packaging lithography where the resist thickness is substantial, linewidths are 1-10 mu m, and registration requirements are less stringent.< ></description><identifier>ISSN: 0093-3813</identifier><identifier>EISSN: 1939-9375</identifier><identifier>DOI: 10.1109/27.131020</identifier><identifier>CODEN: ITPSBD</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Electron beams ; Exact sciences and technology ; Glow discharges ; Microelectronics ; Physical properties ; Plasma applications ; Plasma materials processing ; Plasma temperature ; Polyimides ; Polymer films ; Polymer industry, paints, wood ; Properties and testing ; Pulse generation ; Radiation influence ; Resists ; Technology of polymers</subject><ispartof>IEEE transactions on plasma science, 1990-04, Vol.18 (2), p.198-209</ispartof><rights>1990 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c301t-bf35deb912c7849271ce95be2a6610c71a9982036ab0f7dbf0d5201b77a541413</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/131020$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/131020$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=6933432$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Li, L.</creatorcontrib><creatorcontrib>Krishnaswamy, J.</creatorcontrib><creatorcontrib>Yu, Z.</creatorcontrib><creatorcontrib>Collins, G.J.</creatorcontrib><creatorcontrib>Hiraoka, H.</creatorcontrib><creatorcontrib>Caolo, M.A.</creatorcontrib><title>Lithographic processing of polymers using plasma-generated electron beams</title><title>IEEE transactions on plasma science</title><addtitle>TPS</addtitle><description>Pattern definition in polymer films is achieved using electron beams generated in soft vacuum (0.05-0.50 torr) glow discharges either on a continuous or a pulsed (20-100 ns) basis. With the continuous-mode electron beam, 7- mu m transmission mask features are replicated in both polymethyl methacrylate (PMMA) and polyimide resists. Using a pulsed electron-beam submicron ( approximately 0.5 mu m) features are transferred from an electron-transmitting stencil mask into the PMMA. The soft-vacuum pulsed electron beam is also eminently suited for polymer stabilization. Pulsed electron-beam hardening of 0.05-3.5 mu -thick AZ-type and MacDermid resist patterns is also demonstrated with hardened resist patterns stable to temperatures between 200 degrees and 350 degrees C. The demonstrated replication and pattern stabilization technique may be applicable in microelectronics packaging lithography where the resist thickness is substantial, linewidths are 1-10 mu m, and registration requirements are less stringent.< ></description><subject>Applied sciences</subject><subject>Electron beams</subject><subject>Exact sciences and technology</subject><subject>Glow discharges</subject><subject>Microelectronics</subject><subject>Physical properties</subject><subject>Plasma applications</subject><subject>Plasma materials processing</subject><subject>Plasma temperature</subject><subject>Polyimides</subject><subject>Polymer films</subject><subject>Polymer industry, paints, wood</subject><subject>Properties and testing</subject><subject>Pulse generation</subject><subject>Radiation influence</subject><subject>Resists</subject><subject>Technology of polymers</subject><issn>0093-3813</issn><issn>1939-9375</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNpFkD1LxEAQhhdR8DwtbK1SiGCRc2Y3yWZLOfw4CNhoHTabyV0kX-7kivv3RnNo9cLwzMPLK8Q1wgoRzIPUK1QIEk7EAo0yoVE6PhULAKNClaI6FxfMnwAYxSAXYpPV467fejvsahcMvnfEXHfboK-CoW8OLXkO9r-XobHc2nBLHXk7UhlQQ270fRcUZFu-FGeVbZiujrkUH89P7-vXMHt72awfs9ApwDEsKhWXVBiUTqeRkRodmbggaZMEwWm0xqQSVGILqHRZVFDGErDQ2sYRRqiW4m72TmW_9sRj3tbsqGlsR_2ec5kqmUqECbyfQed7Zk9VPvi6tf6QI-Q_Y-VS5_NYE3t7lFp2tqm87VzNfw-JUSpScsJuZqwmon_d7PgG2T1wyQ</recordid><startdate>19900401</startdate><enddate>19900401</enddate><creator>Li, L.</creator><creator>Krishnaswamy, J.</creator><creator>Yu, Z.</creator><creator>Collins, G.J.</creator><creator>Hiraoka, H.</creator><creator>Caolo, M.A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19900401</creationdate><title>Lithographic processing of polymers using plasma-generated electron beams</title><author>Li, L. ; Krishnaswamy, J. ; Yu, Z. ; Collins, G.J. ; Hiraoka, H. ; Caolo, M.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c301t-bf35deb912c7849271ce95be2a6610c71a9982036ab0f7dbf0d5201b77a541413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Applied sciences</topic><topic>Electron beams</topic><topic>Exact sciences and technology</topic><topic>Glow discharges</topic><topic>Microelectronics</topic><topic>Physical properties</topic><topic>Plasma applications</topic><topic>Plasma materials processing</topic><topic>Plasma temperature</topic><topic>Polyimides</topic><topic>Polymer films</topic><topic>Polymer industry, paints, wood</topic><topic>Properties and testing</topic><topic>Pulse generation</topic><topic>Radiation influence</topic><topic>Resists</topic><topic>Technology of polymers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, L.</creatorcontrib><creatorcontrib>Krishnaswamy, J.</creatorcontrib><creatorcontrib>Yu, Z.</creatorcontrib><creatorcontrib>Collins, G.J.</creatorcontrib><creatorcontrib>Hiraoka, H.</creatorcontrib><creatorcontrib>Caolo, M.A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on plasma science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Li, L.</au><au>Krishnaswamy, J.</au><au>Yu, Z.</au><au>Collins, G.J.</au><au>Hiraoka, H.</au><au>Caolo, M.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lithographic processing of polymers using plasma-generated electron beams</atitle><jtitle>IEEE transactions on plasma science</jtitle><stitle>TPS</stitle><date>1990-04-01</date><risdate>1990</risdate><volume>18</volume><issue>2</issue><spage>198</spage><epage>209</epage><pages>198-209</pages><issn>0093-3813</issn><eissn>1939-9375</eissn><coden>ITPSBD</coden><abstract>Pattern definition in polymer films is achieved using electron beams generated in soft vacuum (0.05-0.50 torr) glow discharges either on a continuous or a pulsed (20-100 ns) basis. With the continuous-mode electron beam, 7- mu m transmission mask features are replicated in both polymethyl methacrylate (PMMA) and polyimide resists. Using a pulsed electron-beam submicron ( approximately 0.5 mu m) features are transferred from an electron-transmitting stencil mask into the PMMA. The soft-vacuum pulsed electron beam is also eminently suited for polymer stabilization. Pulsed electron-beam hardening of 0.05-3.5 mu -thick AZ-type and MacDermid resist patterns is also demonstrated with hardened resist patterns stable to temperatures between 200 degrees and 350 degrees C. The demonstrated replication and pattern stabilization technique may be applicable in microelectronics packaging lithography where the resist thickness is substantial, linewidths are 1-10 mu m, and registration requirements are less stringent.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/27.131020</doi><tpages>12</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0093-3813 |
| ispartof | IEEE transactions on plasma science, 1990-04, Vol.18 (2), p.198-209 |
| issn | 0093-3813 1939-9375 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_6933432 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Electron beams Exact sciences and technology Glow discharges Microelectronics Physical properties Plasma applications Plasma materials processing Plasma temperature Polyimides Polymer films Polymer industry, paints, wood Properties and testing Pulse generation Radiation influence Resists Technology of polymers |
| title | Lithographic processing of polymers using plasma-generated electron beams |
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