Anisotropy of Magnetoresistance of the p-Type Ferromagnetic Semiconductor HgCr2Se4

An experimental investigation is made of the anisotropy of magnetoresistance of the ferromagnetic p‐type semiconductor HgCr2Se4 on specimens doped with intrinsic defects and Ag. A simple theory is developed dealing with the magnetoresistance of the p‐type ferromagnetic semiconductor with Γ8 symmetry...

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Veröffentlicht in:	Physica status solidi. B. Basic research 1990-03, Vol.158 (1), p.307-317
Hauptverfasser:	Kostylev, V. A., Gizhevskii, B. A., Samokhvalov, A. A., Auslender, M. I., Bebenin, N. G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Galvanomagnetic and other magnetotransport effects Physics
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Beschreibung
Zusammenfassung:	An experimental investigation is made of the anisotropy of magnetoresistance of the ferromagnetic p‐type semiconductor HgCr2Se4 on specimens doped with intrinsic defects and Ag. A simple theory is developed dealing with the magnetoresistance of the p‐type ferromagnetic semiconductor with Γ8 symmetry of the valence band top split by a strong exchange field produced by localized spins. The theory provides a good description of the experimental data. [Russian Text Ignored]
ISSN:	0370-1972 1521-3951
DOI:	10.1002/pssb.2221580131