Defect Analysis on GaAs Crystals by Precision Measurements of Density and Lattice Parameter

Undoped semi‐insulating GaAs crystals grown by LEC with different As fractions, y, in the Ga1−yAsy(l) melt (0.45 < y < 0.51) and Si, Te, and Zn doped GaAs crystals are analyzed by precision measurements for density, d, lattice parameter, a, and molar mass, M. Density and lattice parameter are...

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Veröffentlicht in:	Physica status solidi. A, Applied research Applied research, 1990-11, Vol.122 (1), p.139-152
Hauptverfasser:	Sajovec, F., Wolf, R., Fattah, A., Bickmann, K., Wenzl, H., Nagel, G., Rüfer, H., Tomzig, E., de Bièvre, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Physics Structure of solids and liquids crystallography
Online-Zugang:	Volltext
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