A study of nonequilibrium diffusion modeling-applications to rapid thermal annealing and advanced bipolar technologies

A nonequilibrium diffusion model has been developed to study the influence of point defects on dopant redistribution, especially for transient enhanced diffusion. The coupled equations for point defects, substitutional impurities, and impurities/point defect pairs are solved under nonequilibriums co...

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Veröffentlicht in:	IEEE transactions on electron devices 1992-03, Vol.39 (3), p.648-661
Hauptverfasser:	Baccus, B., Wada, T., Shigyo, N., Norishima, M., Nakajima, H., Inou, K., Iinuma, T., Iwai, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Associate members Bismuth Boron Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Impurities Integrated circuits Ion implantation Poisson equations Rapid thermal annealing Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor process modeling Steady-state Ultra large scale integration
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