Sub-μm, planarized, Nb-AlOx-Nb Josephson process for 125 mm wafers developed in partnership with Si technology
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| Veröffentlicht in: | Applied physics letters 1991-11, Vol.59 (20), p.2609-2611 |
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| Hauptverfasser: | , , , , , , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
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| container_end_page | 2611 |
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| container_issue | 20 |
| container_start_page | 2609 |
| container_title | Applied physics letters |
| container_volume | 59 |
| creator | KETCHEN, M. B PEARSON, D PETRILLO, K MANNY, M BASAVAIAH, S BRODSKY, S KAPLAN, S. B GALLAGHER, W. J BHUSHAN, M KLEINSASSER, A. W HU, C.-K SMYTH, M LOGAN, L STAWIASZ, K BARAN, E JASO, M ROSS, T |
| description | |
| doi_str_mv | 10.1063/1.106405 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1991-11, Vol.59 (20), p.2609-2611 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_5441071 |
| source | AIP Digital Archive |
| subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Superconducting devices |
| title | Sub-μm, planarized, Nb-AlOx-Nb Josephson process for 125 mm wafers developed in partnership with Si technology |
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