High sensitivity photoresistors based on homogeneous Pb1-x-ySnxGeyTe :In epitaxal films
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| Veröffentlicht in: | Infrared physics 1992, Vol.33 (3), p.197-201 |
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| container_end_page | 201 |
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| container_issue | 3 |
| container_start_page | 197 |
| container_title | Infrared physics |
| container_volume | 33 |
| creator | CHISHKO, V. F HRYAPOV, V. T KASATKINI. L OSIPOV, V. V SLINKO, E. I SMOLIN, O. V TRETINIK, V. V |
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| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0020-0891 |
| ispartof | Infrared physics, 1992, Vol.33 (3), p.197-201 |
| issn | 0020-0891 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_5417032 |
| source | Alma/SFX Local Collection |
| subjects | Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | High sensitivity photoresistors based on homogeneous Pb1-x-ySnxGeyTe :In epitaxal films |
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