Deep levels in GalnP2 grown by metal-organic chemical vapour deposition
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Veröffentlicht in: | Journal of materials science letters 1992, Vol.11 (10), p.645-647 |
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container_title | Journal of materials science letters |
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creator | YING GAO JIALONG ZHAO XUEYAN LIU XIAN SU TIANJU GU SUTTON, M JIACHANG LIANG |
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fullrecord | <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_5345983</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>5345983</sourcerecordid><originalsourceid>FETCH-pascalfrancis_primary_53459833</originalsourceid><addsrcrecordid>eNqNizkOwjAQAF2ARDj-sAVtJJMDhZojlBT00cZsgpFjW94QlN-TggdQjTSamYlIJvtdXMikWIgl80vKSeRZJMoTkQdDAxkGbaFEY28JtMF9LNQjdNSjiV1o0WoF6kmdVmhgQO_eAR7kHeteO7sW8wYN0-bHldhezvfjNfbI09AEtEpz5YPuMIxVnmb5oUjTP7Mv3fc8dg</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Deep levels in GalnP2 grown by metal-organic chemical vapour deposition</title><source>Springer Nature - Complete Springer Journals</source><creator>YING GAO ; JIALONG ZHAO ; XUEYAN LIU ; XIAN SU ; TIANJU GU ; SUTTON, M ; JIACHANG LIANG</creator><creatorcontrib>YING GAO ; JIALONG ZHAO ; XUEYAN LIU ; XIAN SU ; TIANJU GU ; SUTTON, M ; JIACHANG LIANG</creatorcontrib><identifier>ISSN: 0261-8028</identifier><identifier>CODEN: JMSLD5</identifier><language>eng</language><publisher>Dordrecht: Kluwer Academic Publishers</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron states ; Exact sciences and technology ; Impurity and defect levels ; Physics</subject><ispartof>Journal of materials science letters, 1992, Vol.11 (10), p.645-647</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4009</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5345983$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>YING GAO</creatorcontrib><creatorcontrib>JIALONG ZHAO</creatorcontrib><creatorcontrib>XUEYAN LIU</creatorcontrib><creatorcontrib>XIAN SU</creatorcontrib><creatorcontrib>TIANJU GU</creatorcontrib><creatorcontrib>SUTTON, M</creatorcontrib><creatorcontrib>JIACHANG LIANG</creatorcontrib><title>Deep levels in GalnP2 grown by metal-organic chemical vapour deposition</title><title>Journal of materials science letters</title><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron states</subject><subject>Exact sciences and technology</subject><subject>Impurity and defect levels</subject><subject>Physics</subject><issn>0261-8028</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNqNizkOwjAQAF2ARDj-sAVtJJMDhZojlBT00cZsgpFjW94QlN-TggdQjTSamYlIJvtdXMikWIgl80vKSeRZJMoTkQdDAxkGbaFEY28JtMF9LNQjdNSjiV1o0WoF6kmdVmhgQO_eAR7kHeteO7sW8wYN0-bHldhezvfjNfbI09AEtEpz5YPuMIxVnmb5oUjTP7Mv3fc8dg</recordid><startdate>1992</startdate><enddate>1992</enddate><creator>YING GAO</creator><creator>JIALONG ZHAO</creator><creator>XUEYAN LIU</creator><creator>XIAN SU</creator><creator>TIANJU GU</creator><creator>SUTTON, M</creator><creator>JIACHANG LIANG</creator><general>Kluwer Academic Publishers</general><scope>IQODW</scope></search><sort><creationdate>1992</creationdate><title>Deep levels in GalnP2 grown by metal-organic chemical vapour deposition</title><author>YING GAO ; JIALONG ZHAO ; XUEYAN LIU ; XIAN SU ; TIANJU GU ; SUTTON, M ; JIACHANG LIANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-pascalfrancis_primary_53459833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron states</topic><topic>Exact sciences and technology</topic><topic>Impurity and defect levels</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>YING GAO</creatorcontrib><creatorcontrib>JIALONG ZHAO</creatorcontrib><creatorcontrib>XUEYAN LIU</creatorcontrib><creatorcontrib>XIAN SU</creatorcontrib><creatorcontrib>TIANJU GU</creatorcontrib><creatorcontrib>SUTTON, M</creatorcontrib><creatorcontrib>JIACHANG LIANG</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Journal of materials science letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>YING GAO</au><au>JIALONG ZHAO</au><au>XUEYAN LIU</au><au>XIAN SU</au><au>TIANJU GU</au><au>SUTTON, M</au><au>JIACHANG LIANG</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Deep levels in GalnP2 grown by metal-organic chemical vapour deposition</atitle><jtitle>Journal of materials science letters</jtitle><date>1992</date><risdate>1992</risdate><volume>11</volume><issue>10</issue><spage>645</spage><epage>647</epage><pages>645-647</pages><issn>0261-8028</issn><coden>JMSLD5</coden><cop>Dordrecht</cop><pub>Kluwer Academic Publishers</pub></addata></record> |
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identifier | ISSN: 0261-8028 |
ispartof | Journal of materials science letters, 1992, Vol.11 (10), p.645-647 |
issn | 0261-8028 |
language | eng |
recordid | cdi_pascalfrancis_primary_5345983 |
source | Springer Nature - Complete Springer Journals |
subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Impurity and defect levels Physics |
title | Deep levels in GalnP2 grown by metal-organic chemical vapour deposition |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T10%3A11%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Deep%20levels%20in%20GalnP2%20grown%20by%20metal-organic%20chemical%20vapour%20deposition&rft.jtitle=Journal%20of%20materials%20science%20letters&rft.au=YING%20GAO&rft.date=1992&rft.volume=11&rft.issue=10&rft.spage=645&rft.epage=647&rft.pages=645-647&rft.issn=0261-8028&rft.coden=JMSLD5&rft_id=info:doi/&rft_dat=%3Cpascalfrancis%3E5345983%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |