Low-temperature furnace-grown reoxidized nitrided oxide gate dielectrics as a barrier to boron penetration
Reoxidized nitrided oxide (ROXNOX) gate dielectrics can be used to block the diffusion of boron into the MOS channel region. However, fixed oxide charge annealing can mask the effects of boron in the channel, a particularly important consideration for low-temperature gate oxides. The authors separat...
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| Veröffentlicht in: | IEEE electron device letters 1992-04, Vol.13 (4), p.217-219 |
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| container_end_page | 219 |
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| container_issue | 4 |
| container_start_page | 217 |
| container_title | IEEE electron device letters |
| container_volume | 13 |
| creator | Fang, H. Krisch, K.S. Gross, B.J. Sodini, C.G. Chung, J. Antoniadis, D.A. |
| description | Reoxidized nitrided oxide (ROXNOX) gate dielectrics can be used to block the diffusion of boron into the MOS channel region. However, fixed oxide charge annealing can mask the effects of boron in the channel, a particularly important consideration for low-temperature gate oxides. The authors separate the effect of fixed charge annealing from the effect of boron diffusion and demonstrate that a low-temperature furnace-grown reoxidized nitrided oxide has a substantial advantage over conventional gate oxides in protecting the channel from boron over a wide range of annealing times and temperatures. They also address the issue of fixed charge annealing in low-temperature reoxidized nitrided oxides and present an approach to maintain acceptable gate dielectric quality while preserving a low D-t product for integration into a scaled dual-gate CMOS process.< > |
| doi_str_mv | 10.1109/55.145026 |
| format | Article |
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However, fixed oxide charge annealing can mask the effects of boron in the channel, a particularly important consideration for low-temperature gate oxides. The authors separate the effect of fixed charge annealing from the effect of boron diffusion and demonstrate that a low-temperature furnace-grown reoxidized nitrided oxide has a substantial advantage over conventional gate oxides in protecting the channel from boron over a wide range of annealing times and temperatures. They also address the issue of fixed charge annealing in low-temperature reoxidized nitrided oxides and present an approach to maintain acceptable gate dielectric quality while preserving a low D-t product for integration into a scaled dual-gate CMOS process.< ></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.145026</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Annealing ; Applied sciences ; Boron ; CMOS process ; Compound structure devices ; Dielectrics ; Doping ; Electric resistance ; Electronics ; Exact sciences and technology ; Implants ; MOS devices ; Protection ; Semiconductor electronics. Microelectronics. Optoelectronics. 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However, fixed oxide charge annealing can mask the effects of boron in the channel, a particularly important consideration for low-temperature gate oxides. The authors separate the effect of fixed charge annealing from the effect of boron diffusion and demonstrate that a low-temperature furnace-grown reoxidized nitrided oxide has a substantial advantage over conventional gate oxides in protecting the channel from boron over a wide range of annealing times and temperatures. They also address the issue of fixed charge annealing in low-temperature reoxidized nitrided oxides and present an approach to maintain acceptable gate dielectric quality while preserving a low D-t product for integration into a scaled dual-gate CMOS process.< ></description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Boron</subject><subject>CMOS process</subject><subject>Compound structure devices</subject><subject>Dielectrics</subject><subject>Doping</subject><subject>Electric resistance</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Implants</subject><subject>MOS devices</subject><subject>Protection</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Temperature distribution</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNqNkE1LxDAQhoMouK4evHrKQQQPXZM0026PsvgFC170XNJkumTpNjVJWfXX29JFr8LADMMzD8NLyCVnC85ZcQew4BKYyI7IjAMsEwZZekxmLJc8STnLTslZCFvGuJS5nJHt2u2TiLsOvYq9R1r3vlUak413-5Z6dJ_W2G80tLXRWzMM4wbpRkWkxmKDetjrQNVQtFLeW_Q0Olo571raYYtxUFvXnpOTWjUBLw59Tt4fH95Wz8n69elldb9OtGRpTBSa4dkiZbURUFSYGVFpzqGSBSyNkLkWBiqoi4xVJs01U0utatBYCwmZFOmc3EzezruPHkMsdzZobBrVoutDKZaFyBmwf4BpOkQ2Gm8nUHsXgse67LzdKf9VclaOsZcA5RT7wF4fpCpo1dRetdqG3wMQec75qLyaMIuIf7rJ8QMvS4tM</recordid><startdate>19920401</startdate><enddate>19920401</enddate><creator>Fang, H.</creator><creator>Krisch, K.S.</creator><creator>Gross, B.J.</creator><creator>Sodini, C.G.</creator><creator>Chung, J.</creator><creator>Antoniadis, D.A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19920401</creationdate><title>Low-temperature furnace-grown reoxidized nitrided oxide gate dielectrics as a barrier to boron penetration</title><author>Fang, H. ; Krisch, K.S. ; Gross, B.J. ; Sodini, C.G. ; Chung, J. ; Antoniadis, D.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c403t-aed074930fd259be6d2bc115b4958d247c2d5b5f960bd37c0a8caf5cef2456423</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Annealing</topic><topic>Applied sciences</topic><topic>Boron</topic><topic>CMOS process</topic><topic>Compound structure devices</topic><topic>Dielectrics</topic><topic>Doping</topic><topic>Electric resistance</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Implants</topic><topic>MOS devices</topic><topic>Protection</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Temperature distribution</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fang, H.</creatorcontrib><creatorcontrib>Krisch, K.S.</creatorcontrib><creatorcontrib>Gross, B.J.</creatorcontrib><creatorcontrib>Sodini, C.G.</creatorcontrib><creatorcontrib>Chung, J.</creatorcontrib><creatorcontrib>Antoniadis, D.A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fang, H.</au><au>Krisch, K.S.</au><au>Gross, B.J.</au><au>Sodini, C.G.</au><au>Chung, J.</au><au>Antoniadis, D.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-temperature furnace-grown reoxidized nitrided oxide gate dielectrics as a barrier to boron penetration</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1992-04-01</date><risdate>1992</risdate><volume>13</volume><issue>4</issue><spage>217</spage><epage>219</epage><pages>217-219</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Reoxidized nitrided oxide (ROXNOX) gate dielectrics can be used to block the diffusion of boron into the MOS channel region. However, fixed oxide charge annealing can mask the effects of boron in the channel, a particularly important consideration for low-temperature gate oxides. The authors separate the effect of fixed charge annealing from the effect of boron diffusion and demonstrate that a low-temperature furnace-grown reoxidized nitrided oxide has a substantial advantage over conventional gate oxides in protecting the channel from boron over a wide range of annealing times and temperatures. They also address the issue of fixed charge annealing in low-temperature reoxidized nitrided oxides and present an approach to maintain acceptable gate dielectric quality while preserving a low D-t product for integration into a scaled dual-gate CMOS process.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.145026</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1992-04, Vol.13 (4), p.217-219 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_5277112 |
| source | IEEE Electronic Library (IEL) |
| subjects | Annealing Applied sciences Boron CMOS process Compound structure devices Dielectrics Doping Electric resistance Electronics Exact sciences and technology Implants MOS devices Protection Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature distribution |
| title | Low-temperature furnace-grown reoxidized nitrided oxide gate dielectrics as a barrier to boron penetration |
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