A model for hot-electron-induced MOSFET linear-current degradation based on mobility reduction due to interface-state generation

A simple model for the hot-electron degradation of MOSFET linear-current drive is developed on the basis of the reduction of the inversion-layer mobility due to the generation of interface states. The model can explain the observed dependence of the device hot-electron lifetime on the effective chan...

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Veröffentlicht in:	IEEE transactions on electron devices 1991-06, Vol.38 (6), p.1362-1370
Hauptverfasser:	Chung, J.E., Ko, P.-K., Hu, C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Charge pumps Degradation Electric variables Electrical resistance measurement Electronics Exact sciences and technology Interface states MOSFET circuits Predictive models Scattering Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stress Transistors Very large scale integration
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