A Si-bipolar technology for optical fiber transmission rates above 10 Gb/s

A Si-bipolar technology for optical fiber transmission rates above 10 Gb/s

A multiplexer operating at up to 12 Gb/s has been demonstrated using a simple, but optimized, silicon bipolar technology with 2 mu m lithography. Using this simple but optimized technology, a 12 Gb/s multiplexer was implemented. Circuit simulations predict the increase of the bit rate up to at least...

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Veröffentlicht in:IEEE journal on selected areas in communications 1991-06, Vol.9 (5), p.652-655
Hauptverfasser: Albers, J.N., Schreiber, H.-U.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Bipolar transistors
Bit rate
Capacitance
Circuits
Etching
Exact sciences and technology
Lithography
Metallization
Multiplexing
Optical fibers
Paper technology
Systems, networks and services of telecommunications
Telecommunications
Telecommunications and information theory
Transmission and modulation (techniques and equipments)
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Zusammenfassung:A multiplexer operating at up to 12 Gb/s has been demonstrated using a simple, but optimized, silicon bipolar technology with 2 mu m lithography. Using this simple but optimized technology, a 12 Gb/s multiplexer was implemented. Circuit simulations predict the increase of the bit rate up to at least 15 Gb/s by changing to the 1.5 mu m lithography. The results of experimental investigations and circuit simulations show that low-cost silicon-based bipolar circuits will be available for future optical-fiber transmission systems with data rates higher than 10 Gb/s.< >
ISSN:0733-8716
1558-0008
DOI:10.1109/49.87632