Extrinsic base surface passivation in GaInP/GaAs heterojunction bipolar transistors
The authors demonstrate excellent passivation of the extrinsic base surfaces in GaInP/GaAs heterojunction bipolar transistors (HBTs) having small emitter areas. Passivated devices with an area as small as 4*20 mu m/sup 2/ exhibit the highest reported current gain value of 2690 for GaInP/GaAs HBTs, w...
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| Veröffentlicht in: | IEEE electron device letters 1993-06, Vol.14 (6), p.301-303 |
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| container_title | IEEE electron device letters |
| container_volume | 14 |
| creator | Liu, W. Beam, E. Henderson, T. Fan, S.-K. |
| description | The authors demonstrate excellent passivation of the extrinsic base surfaces in GaInP/GaAs heterojunction bipolar transistors (HBTs) having small emitter areas. Passivated devices with an area as small as 4*20 mu m/sup 2/ exhibit the highest reported current gain value of 2690 for GaInP/GaAs HBTs, while unpassivated 4*20- mu m/sup 2/ devices exhibit a current gain of only 500. Measured current gains as a function of collector current density are almost identical for devices with varying emitter widths of 4, 6, 8, 12, 16, and 100 mu m. The current gains are also nearly identical for devices with varying passivation ledge widths of 1, 2, 3, and 6 mu m. These results are contrasted with those of a previously published study reporting surface passivation for a GaInP/GaAs HBT with a large emitter area.< > |
| doi_str_mv | 10.1109/55.215205 |
| format | Article |
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Passivated devices with an area as small as 4*20 mu m/sup 2/ exhibit the highest reported current gain value of 2690 for GaInP/GaAs HBTs, while unpassivated 4*20- mu m/sup 2/ devices exhibit a current gain of only 500. Measured current gains as a function of collector current density are almost identical for devices with varying emitter widths of 4, 6, 8, 12, 16, and 100 mu m. The current gains are also nearly identical for devices with varying passivation ledge widths of 1, 2, 3, and 6 mu m. These results are contrasted with those of a previously published study reporting surface passivation for a GaInP/GaAs HBT with a large emitter area.< ></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.215205</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Current density ; Current measurement ; Degradation ; Density measurement ; Electronics ; Exact sciences and technology ; Gain measurement ; Gallium arsenide ; Gold ; Heterojunction bipolar transistors ; Molecular beam epitaxial growth ; Passivation ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Passivated devices with an area as small as 4*20 mu m/sup 2/ exhibit the highest reported current gain value of 2690 for GaInP/GaAs HBTs, while unpassivated 4*20- mu m/sup 2/ devices exhibit a current gain of only 500. Measured current gains as a function of collector current density are almost identical for devices with varying emitter widths of 4, 6, 8, 12, 16, and 100 mu m. The current gains are also nearly identical for devices with varying passivation ledge widths of 1, 2, 3, and 6 mu m. These results are contrasted with those of a previously published study reporting surface passivation for a GaInP/GaAs HBT with a large emitter area.< ></description><subject>Applied sciences</subject><subject>Current density</subject><subject>Current measurement</subject><subject>Degradation</subject><subject>Density measurement</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain measurement</subject><subject>Gallium arsenide</subject><subject>Gold</subject><subject>Heterojunction bipolar transistors</subject><subject>Molecular beam epitaxial growth</subject><subject>Passivation</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNqFkE1Lw0AQhhdRsFYPXj3lIIKHtLvZzxxLqbVQUFDPYbOdxS1pEncS0X9vtKVXTwPzPvPAvIRcMzphjOZTKScZkxmVJ2TEpDQplYqfkhHVgqWcUXVOLhC3lDIhtBiRl8VXF0ONwSWlRUiwj946SFqLGD5tF5o6CXWytKv6ebq0M0zeoYPYbPva_YVlaJvKxqSLdrBg10S8JGfeVghXhzkmbw-L1_ljun5aruazdeoE5V2aZU577nKXacmkLS2XRkAuJDUbJyBTEjbAudKKOQXeO-8BnLbOsGFdMj4md3tvG5uPHrArdgEdVJWtoemxyHKaC67p_6BRhhslB_B-D7rYIEbwRRvDzsbvgtHit99CymLf78DeHqQWna388L8LeDwQ2uRGmgG72WMBAI7pwfED6bGDDQ</recordid><startdate>19930601</startdate><enddate>19930601</enddate><creator>Liu, W.</creator><creator>Beam, E.</creator><creator>Henderson, T.</creator><creator>Fan, S.-K.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19930601</creationdate><title>Extrinsic base surface passivation in GaInP/GaAs heterojunction bipolar transistors</title><author>Liu, W. ; Beam, E. ; Henderson, T. ; Fan, S.-K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c403t-22c7f3c9c27515aba3584e94508dc4e265ede336761c6effcffeec7ac81e33b13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Applied sciences</topic><topic>Current density</topic><topic>Current measurement</topic><topic>Degradation</topic><topic>Density measurement</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gain measurement</topic><topic>Gallium arsenide</topic><topic>Gold</topic><topic>Heterojunction bipolar transistors</topic><topic>Molecular beam epitaxial growth</topic><topic>Passivation</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, W.</creatorcontrib><creatorcontrib>Beam, E.</creatorcontrib><creatorcontrib>Henderson, T.</creatorcontrib><creatorcontrib>Fan, S.-K.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Liu, W.</au><au>Beam, E.</au><au>Henderson, T.</au><au>Fan, S.-K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Extrinsic base surface passivation in GaInP/GaAs heterojunction bipolar transistors</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1993-06-01</date><risdate>1993</risdate><volume>14</volume><issue>6</issue><spage>301</spage><epage>303</epage><pages>301-303</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>The authors demonstrate excellent passivation of the extrinsic base surfaces in GaInP/GaAs heterojunction bipolar transistors (HBTs) having small emitter areas. Passivated devices with an area as small as 4*20 mu m/sup 2/ exhibit the highest reported current gain value of 2690 for GaInP/GaAs HBTs, while unpassivated 4*20- mu m/sup 2/ devices exhibit a current gain of only 500. Measured current gains as a function of collector current density are almost identical for devices with varying emitter widths of 4, 6, 8, 12, 16, and 100 mu m. The current gains are also nearly identical for devices with varying passivation ledge widths of 1, 2, 3, and 6 mu m. These results are contrasted with those of a previously published study reporting surface passivation for a GaInP/GaAs HBT with a large emitter area.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.215205</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1993-06, Vol.14 (6), p.301-303 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_4789858 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Current density Current measurement Degradation Density measurement Electronics Exact sciences and technology Gain measurement Gallium arsenide Gold Heterojunction bipolar transistors Molecular beam epitaxial growth Passivation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Extrinsic base surface passivation in GaInP/GaAs heterojunction bipolar transistors |
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